Stability of hydrogen-terminated vicinal Si(1 1 1) surface under ambient atmosphere

Applied Surface Science

Volumn 256, Issue 11, 2010, Pages 3423-3426

  Kolibal M ^a   Cechal J ^a   Bartosik M ^a   Mach, J ^a   Sikola T ^a  

^a BRNO UNIVERSITY OF TECHNOLOGY   (Czech Republic)

Author keywords

Etching; Oxidation; Silicon substrates; Wet chemical pre treatment; X ray photoelectron spectroscopy

Indexed keywords

ATOMIC FORCE MICROSCOPY; ETCHING; HYDROGEN; OXIDATION; PASSIVATION; PHOTOELECTRONS; PHOTONS; SILICON OXIDES; X RAY PHOTOELECTRON SPECTROSCOPY;

AMBIENT ATMOSPHERE; COMPARATIVE STUDIES; ETCHING STEP; HF ETCHING; PASSIVATED SURFACE; SILICON SUBSTRATES; SURFACE PASSIVATION; WET CHEMICALS;

WET ETCHING;

EID: 77649179923     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.12.045     Document Type: Article

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