In situ monitoring of the electronic properties and the pH stability of grafted Si(1 1 1)

Journal of Electroanalytical Chemistry

Volumn 646, Issue 1-2, 2010, Pages 33-42

  Aureau, D ^a,b   Rappich, J ^b   Moraillon, A ^a   Allongue, P ^a   Ozanam, F ^a   Chazalviel, J N ^a  

^a LABORATOIRE DE PHYSIQUE DE LA MATIÈRE CONDENSÉE   (France)

^b HAHN MEITNER INSTITUT   (Germany)

Author keywords

Infrared; Organic layer; Photoluminescence; Photovoltage; Silicon; Surface states

Indexed keywords

CAPACITANCE; ELECTRON ENERGY LEVELS; ELECTRONIC PROPERTIES; GRAFTING (CHEMICAL); HETEROJUNCTIONS; INFRARED SPECTROSCOPY; MONOLAYERS; OXIDATION; PARAFFIN WAXES; PARAFFINS; PASSIVATION; PH EFFECTS; PHASE INTERFACES; PHOTOLUMINESCENCE; SILICON OXIDES;

ALIPHATIC CHAINS; AMBIENT ATMOSPHERE; H-TERMINATED SURFACE; IN-SITU MONITORING; INFRARED; INTERFACE CAPACITANCE; LIQUID WATER; LOCALIZED OXIDATION OF SILICONS; MOLECULAR WATER; ORDERS OF MAGNITUDE; ORGANIC LAYERS; ORGANIC MONOLAYERS; PARAFFIN FILMS; PH RANGE; PH STABILITY; PHOTO-VOLTAGE; PHOTOLUMINESCENCE INTENSITIES; SI (1 1 1); SILICON OXIDATION; SILICON SURFACES; SPECTROSCOPY MEASUREMENTS; STRUCTURAL DEFECT; SURFACE PASSIVATION; SURFACE PHOTOVOLTAGES; SURFACE STATE; UPPER LIMITS; VIBRATIONAL INFRARED; WETTING PROPERTY;

SURFACE PROPERTIES;

EID: 77955324364     PISSN: 15726657     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jelechem.2009.11.032     Document Type: Article

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