Effect of wet-chemical substrate pretreatment on electronic interface properties and recombination losses of a -Si:H/c -Si and a -SiNx:H/c -Si hetero-interfaces

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 3, 2011, Pages 879-882

  Angermann, Heike ^a   Wünsch, Frank ^a   Kunst, Marinus ^a   Laades, Abdelazize ^b   Stürzebecher, Uta ^b   Conrad, Erhard ^a   Korte, Lars ^a   Schmidt, Manfred ^a  

^a HAHN MEITNER INSTITUT   (Germany)

^b CiS Institut für Mikrosensorik gGmbH   (Germany)

Author keywords

Crystalline silicon; Hydrogenated amorphous silicon; Passivation; Recombination; Silicon nitride

Indexed keywords

A-SI:H; AMORPHOUS SILICON (A-SI:H); CHEMICAL PRE-TREATMENT; CHEMICAL TREATMENTS; CONDUCTANCE DECAYS; CRYSTALLINE SILICONS; CZOCHRALSKI; ELECTRONIC INTERFACE; FIELD EFFECT PASSIVATION; FLOAT ZONES; HETERO-INTERFACES; HYDROGENATED AMORPHOUS SILICON; INTERFACE RECOMBINATION; INTERFACE RECOMBINATION VELOCITY; JUNCTION STRUCTURE; P-TYPE; PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION; PRECLEANING; PREPARATION PROCESS; REAR SIDE; RECOMBINATION; RECOMBINATION LOSS; SINGLE CRYSTALLINE SUBSTRATES; SOLAR CELL SUBSTRATES; SUBSTRATE PRETREATMENT; SURFACE PHOTO VOLTAGES; SURFACE STATE DENSITY;

CHARGED PARTICLES; CHEMICAL CLEANING; CRYSTALLINE MATERIALS; HYDROGENATION; PASSIVATION; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POWER QUALITY; SILICON NITRIDE; SUBSTRATES;

AMORPHOUS SILICON;

EID: 79952684824     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201000236     Document Type: Article

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