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Journal of Applied Physics

Volumn 85, Issue 8 I, 1999, Pages 4171-4175

Quantitative analysis of room temperature photoluminescence of c-Si wafers excited by short laser pulses

(6) Timoshenko, V Yu a Petrenko, A B a Stolyarov, M N a Dittrich, Th b Fuessel, W c Rappich, J c

a MOSCOW STATE UNIVERSITY (Russian Federation)

b TECHNICAL UNIVERSITY OF MUNICH (Germany)

c HAHN MEITNER INSTITUT (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; COMPUTER SIMULATION; CORRELATION METHODS; CRYSTAL DEFECTS; INTERFACES (MATERIALS); LASER PULSES; MATHEMATICAL MODELS; PHOTOLUMINESCENCE; QUENCHING; REACTION KINETICS; SILICA; VOLTAGE MEASUREMENT;

INTERBAND PHOTOLUMINESCENCE (PL);

SILICON WAFERS;

EID: 0032607992 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.370327 Document Type: Article

Times cited : (65)

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