Wet-chemical passivation and characterization of silicon interfaces for solar cell applications

Solar Energy Materials and Solar Cells

Volumn 83, Issue 4, 2004, Pages 331-346

  Angermann, H ^a   Henrion, W ^a   Rebien, M ^a   Roseler A ^b  

^a HAHN MEITNER INSTITUT   (Germany)

^b Inst Spektrochem/Angew Spektrosk   (Germany)

Author keywords

Ellipsometry; H termination; Native oxide; Silicon surface passivation; Surface photovoltage

Indexed keywords

ELLIPSOMETRY; INTERFACES (MATERIALS); OXIDATION; PASSIVATION; SILICON; SPECTROSCOPIC ANALYSIS; SURFACES;

H-TERMINATION; NATIVE OXIDE; SILICON SURFACE PASSIVATION; SURFACE PHOTOVOLTAGES;

SOLAR CELLS;

EID: 2942585394     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2004.01.031     Document Type: Article

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