Passivation of structured p-type silicon interfaces: Effect of surface morphology and wet-chemical pre-treatment

Applied Surface Science

Volumn 254, Issue 24, 2008, Pages 8067-8074

  Angermann, H ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

a Si:H c Si hetero junction solar cells; Electrical characterisation; Interface state density; Recombination loss; Silicon substrates; Surface photovoltage; Wet chemical pre treatment

Indexed keywords

CHEMICAL CLEANING; INTERFACES (MATERIALS); PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON WAFERS; SUBSTRATES; SURFACE MORPHOLOGY; SURFACE PROPERTIES;

A-SI:H/C-SI; ELECTRICAL CHARACTERISATION; INTERFACE STATE DENSITY; RECOMBINATION LOSS; SILICON SUBSTRATES; SURFACE PHOTOVOLTAGES; WET CHEMICALS;

INTERFACE STATES;

EID: 52949151913     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.03.022     Document Type: Article

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