Passivation of textured substrates for a-Si:H/c-Si hetero-junction solar cells: Effect of wet-chemical smoothing and intrinsic a-Si:H interlayer

Materials Science and Engineering: B

Volumn 159-160, Issue C, 2009, Pages 219-223

  Angermann, H ^a   Conrad, E ^a   Korte, L ^a   Rappich, J ^a   Schulze, T F ^a   Schmidt, M ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

Etching; Silicon heterostructure solar cells; Surface and interface states; Surface morphology; Surface photovoltage

Indexed keywords

HETEROJUNCTIONS; II-VI SEMICONDUCTORS; INTERFACE STATES; INTERFACES (MATERIALS); OPEN CIRCUIT VOLTAGE; OPTICAL WAVEGUIDES; PASSIVATION; PLASMA CVD; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON SOLAR CELLS; SILICON WAFERS; SUBSTRATES; SURFACE STATES; ZINC OXIDE;

A-SI:H; CELL EFFECTS; ELECTRONIC INTERFACE; HETEROSTRUCTURES SOLAR CELLS; SILICON HETEROSTRUCTURE SOLAR CELL; SUBSTRATE SURFACE; SURFACE AND INTERFACE STATE; SURFACE PHOTOVOLTAGES; TEXTURED SUBSTRATES; WET CHEMICALS;

BUFFER LAYERS;

EID: 67349219119     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2008.10.044     Document Type: Article

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