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Volumn 390, Issue , 2016, Pages 260-265

Oxygen vacancy induced structure change and interface reaction in HfO 2 films on native SiO 2 /Si substrate

Author keywords

Auger line shape; HfO 2 film; Interface reaction; Interface structure; Oxygen vacancy

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; AUGERS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HAFNIUM OXIDES; INTERFACES (MATERIALS); SILICA; SILICATES; SILICON OXIDES; SUBSTRATES; VACANCIES; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 84983802430     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2016.08.051     Document Type: Article
Times cited : (23)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.