Suppression of interfacial diffusion by a predeposited Hf metal layer on SiO 2 /Si

Applied Surface Science

Volumn 222, Issue 1-4, 2004, Pages 346-350

  Tan, Ruiqin ^a   Azuma, Yasushi ^a   Kojima, Isao ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Auger electron spectroscopy; Hafnium dioxide; Sputtering deposition; X ray photoelectron spectroscopy

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; BINDING ENERGY; DEPOSITION; DIFFUSION; HAFNIUM; KINETIC ENERGY; LEAKAGE CURRENTS; LEAST SQUARES APPROXIMATIONS; OXIDATION; OXYGEN; STOICHIOMETRY; SURFACE CHEMISTRY; ULTRATHIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

FILM DEPOSITION; INTERFACE THICKNESS;

SILICA;

EID: 0347380878     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2003.09.003     Document Type: Article

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