Preparation of ultrathin HfO2 films and comparison of HfO 2/SiO2/Si interfacial structures

Surface and Interface Analysis

Volumn 36, Issue 8, 2004, Pages 1007-1010

  Tan, R Q ^a   Azuma, Y ^a   Fujimoto, T ^a   Fan, J W ^a   Kojima, I ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Angle resolved x ray photoelectron spectroscopy; Auger depth profiling; Grazing incident x ray reflectivity; HfO2 film; Interfacial structure

Indexed keywords

BINDING ENERGY; CHEMICAL BONDS; COMPOSITION; DEPOSITION; HAFNIUM COMPOUNDS; OXIDATION; SPUTTERING; STOICHIOMETRY; THICKNESS MEASUREMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

ANGLE-RESOLVED X-RAY PHOTOELECTRON SPECTROSCOPY; AUGER DEPTH PROFILING; GRAZING INCIDENT X-RAY REFLECTIVITY; HFO2 FILM; INTERFACIAL STRUCTURE;

ULTRATHIN FILMS;

EID: 4444236054     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/sia.1824     Document Type: Conference Paper

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