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Volumn 102, Issue 2, 2007, Pages

Oxygen species in HfO2 films: An in situ x-ray photoelectron spectroscopy study

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL BONDS; GRAIN BOUNDARIES; OXYGEN; THERMOCHEMISTRY; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 34547604150     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2759198     Document Type: Article
Times cited : (22)

References (49)
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    • The pressure of the FG annealing atmosphere (370 mbar) was calculated based on 600 mbar reading (identical to N2 annealing) in a thermal conductivity pressure gauge. Because both pressure and temperature readings depend on the thermal conductivities of the annealing atmospheres, identical pressure reading assures that N2 and FG annealing are run at identical temperatures.
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    • Comparison with published spectra (see Refs. 23 24 25) suggests that binding energies are shifted by ∼0.5 eV due to x-ray-induced positive charges in the SiO2 interfacial layer.
    • Comparison with published spectra (see Refs.) suggests that binding energies are shifted by ∼0.5 eV due to x-ray-induced positive charges in the SiO2 interfacial layer.
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    • A time-integrated flux of ∼ 1016 H2 cm-2, which is comparable to ∼2.5× 1016 O cm-2 present in the HfO2 films, was calculated using kinetic gas theory and considering H2 as an important component of the 10-8 mbar base pressure of HfO2 deposition processes.
    • A time-integrated flux of ∼ 1016 H2 cm-2, which is comparable to ∼2.5× 1016 O cm-2 present in the HfO2 films, was calculated using kinetic gas theory and considering H2 as an important component of the 10-8 mbar base pressure of HfO2 deposition processes.


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