Analysis of weakly bonded oxygen in HfO 2/SiO 2/Si stacks by using HRBS and ARXPS

Journal of Materials Science: Materials in Electronics

Volumn 21, Issue 5, 2010, Pages 475-480

  Tien, Ta Chang ^a   Lin, Li Chuan ^a   Lee, Lurng Shehng ^a   Hwang, Chi Jen ^a   Maikap, Siddheswar ^b   Shulga, Yuri M ^c  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^b CHANG GUNG UNIVERSITY   (Taiwan)

^c INSTITUTE OF PROBLEMS OF CHEMICAL PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ANGLE-RESOLVED X-RAY PHOTOELECTRON SPECTROSCOPY; ATOMIC CONCENTRATION; BEFORE AND AFTER; DEPOSITED LAYER; GATE OXIDE; HIGH-RESOLUTION RUTHERFORD BACKSCATTERING SPECTROMETRY; OXIDIZED STATE; OXYGEN ATOM;

ANNEALING; HAFNIUM; HAFNIUM OXIDES; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; OXYGEN; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SILICON COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMS;

EID: 77953303327     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-009-9941-0     Document Type: Article

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