Interfaces analysis of the HfO2/SiO2/Si structure

Journal of Physics and Chemistry of Solids

Volumn 71, Issue 5, 2010, Pages 836-840

  Smirnova, T P ^a   Yakovkina, L V ^a   Beloshapkin, S A ^c   Kaichev, V V ^b   Alferova, N I ^a   Jeong Hwan, Song ^d  

^a ENERGY SYSTEMS INSTITUTE   (Russian Federation)

^b BORESKOV INSTITUTE OF CATALYSIS   (Russian Federation)

^c UNIVERSITY OF LIMERICK   (Ireland)

^d PaiChai University   (South Korea)

Author keywords

A. Thin films

Indexed keywords

A. THIN FILMS; AMORPHOUS INTERFACES; CHEMICAL COMPOSITIONS; CHEMICAL STRUCTURE; CVD METHOD; HAFNIUM SILICATES; INTERFACE LAYER; IR-SPECTROSCOPY; PHYSICAL AND CHEMICAL PROPERTIES; SILICON NATIVE OXIDES; TEM; TETRAKIS; TETRAMETHYL; UNDERLAYERS; XPS;

CHEMICAL PROPERTIES; CHEMICAL VAPOR DEPOSITION; HAFNIUM; SILICATES; SILICON; SILICON OXIDES; SPACECRAFT INSTRUMENTS; SYNTHESIS (CHEMICAL); THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

HAFNIUM COMPOUNDS;

EID: 77950337811     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpcs.2010.02.010     Document Type: Article

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