Electron-beam-induced deposition of carbon films on Si(100) using chemisorbed ethylene as a precursor molecule

Surface Science

Volumn 571, Issue 1-3, 2004, Pages 128-138

  Guise, Olivier ^a,c   Marbach, Hubertus ^a,c   Levy, Jeremy ^a,c   Ahner, Joachim ^b,c   Yates Jr , John T ^a,c  

^a UNIVERSITY OF PITTSBURGH   (United States)

^b SEAGATE RESEARCH   (United States)

^c Ctr for Oxide Semiconduct Mat   (United States)

Author keywords

Carbon; Compound formation; Electron bombardment; Electron stimulated desorption (BSD); Silicon; Silicon carbide; Thermal desorption

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CHEMISORPTION; DEPOSITION; ELECTRON BEAMS; ETHYLENE; ION BOMBARDMENT; SILICON; SILICON CARBIDE; TEMPERATURE PROGRAMMED DESORPTION; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

CARBON FILMS; COMPOUND FORMATION; ELECTRON BEAM INDUCED DEPOSITION (EBID); ELECTRON BOMBARDMENT; ELECTRON SIMULATED DESORPTION (ESD);

CARBON;

EID: 6444240122     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2004.07.053     Document Type: Article

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