Vertically aligned CNT-Cu nano-composite material for stacked through-silicon-via interconnects

Nanotechnology

Volumn 27, Issue 33, 2016, Pages

  Sun, Shuangxi ^a,b   Mu, Wei ^a,b   Edwards, Michael ^b   Mencarelli, Davide ^d   Pierantoni, Luca ^d   Fu, Yifeng ^b,c   Jeppson, Kjell ^b   Liu, Johan ^a,b  

^a SHANGHAI UNIVERSITY   (China)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^c SHT SMART HIGH TECH AB   (Sweden)

^d UNIVERSITÀ POLITECNICA DELLE MARCHE   (Italy)

Author keywords

3D IC; CNT Cu; nanocomposite; TSV

Indexed keywords

ASPECT RATIO; CARBON; CARBON NANOTUBES; COMPOSITE MATERIALS; COPPER; ELECTRONICS PACKAGING; FINITE ELEMENT METHOD; INTEGRATED CIRCUIT INTERCONNECTS; INTEGRATED CIRCUIT MANUFACTURE; NANOCOMPOSITES; NANOSTRUCTURED MATERIALS; SILICON; THERMAL EXPANSION; YARN;

COMPOSITE NANOMATERIAL; ELECTRONIC SYSTEMS; HIGH ASPECT RATIO; RELIABILITY FACTOR; TEMPERATURE COEFFICIENT; THROUGH-SILICON-VIA; THROUGH-SILICON-VIA (TSV); VERTICALLY ALIGNED;

THREE DIMENSIONAL INTEGRATED CIRCUITS;

EID: 84979079561     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/27/33/335705     Document Type: Article

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