Fabrication and electrical performance of through silicon via interconnects filled with a copper/carbon nanotube composite

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 33, Issue 2, 2015, Pages

  Feng, Ying ^a   Burkett, Susan L ^a  

^a University of Alabama   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBES; CHEMICAL VAPOR DEPOSITION; COPPER; ELECTRONICS PACKAGING; ELECTROPLATING; ELECTROPLATING SOLUTIONS; FABRICATION; INTEGRATED CIRCUIT MANUFACTURE; SILICON; SILICON WAFERS; THREE DIMENSIONAL INTEGRATED CIRCUITS; TUNGSTEN; YARN;

DENSIFICATION PROCESS; ELECTRICAL PERFORMANCE; INTERCONNECT MATERIALS; NANOTUBE COMPOSITES; TEST CONFIGURATIONS; THERMAL SENSITIVITY; THROUGH SILICON VIAS; THROUGH-SILICON-VIA;

INTEGRATED CIRCUIT INTERCONNECTS;

EID: 84923674188     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.4907417     Document Type: Article

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