Progress and challenges of tungsten-filled through-silicon via

2010 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2010

Volumn , Issue , 2010, Pages 118-121

  Triyoso, D H ^a   Dao, T B ^a   Kropewnicki, T ^a   Martinez, F ^a   Noble, R ^a   Hamilton, M ^a  

^a FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE DEVICES; FRONT END; PREPARATION TECHNIQUE; RECENT PROGRESS; STRESS MONITORING; THROUGH-SILICON-VIA; VIA FILLING; WAFER BOW;

ELECTRONICS PACKAGING; INTEGRATED CIRCUITS; SILICON WAFERS; TUNGSTEN;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 77955631214     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICICDT.2010.5510274     Document Type: Conference Paper

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