Vertically stacked carbon nanotube-based interconnects for through silicon via application

IEEE Electron Device Letters

Volumn 36, Issue 5, 2015, Pages 499-501

  Jiang, Di ^a   Mu, Wei ^a,b   Chen, Si ^a,b   Fu, Yifeng ^c   Jeppson, Kjell ^a   Liu, Johan ^a,b  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b Robotics Institute   (China)

^c SHT SMART HIGH TECH AB   (Sweden)

Author keywords

3D stacking; Carbon nanotube (CNT); densification; interconnect; through silicon via (TSV); transfer

Indexed keywords

ASPECT RATIO; CARBON; CARBON NANOTUBES; DENSIFICATION; ELECTRONICS PACKAGING; INTEGRATED CIRCUIT INTERCONNECTS; INTEGRATED CIRCUIT MANUFACTURE; SILICON; YARN;

3D STACKING; DEVICE FABRICATIONS; HIGH ASPECT RATIO; INTERCONNECT; THROUGH SILICON VIAS; THROUGH-SILICON-VIA; THROUGH-SILICON-VIA (TSV); TRANSFER;

THREE DIMENSIONAL INTEGRATED CIRCUITS;

EID: 84928748050     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2015.2415198     Document Type: Article

References (15)

1. S.-K. Ryu et al., "Effect of thermal stresses on carrier mobility and keep-out zone around through-silicon vias for 3-D integration, " IEEE Trans. Device Mater. Rel., vol. 12, no. 2, pp. 255-262, Jun. 2012.
2. L. W. Kong et al., "Measuring thermally induced void growth in conformally filled through-silicon vias (TSVs) by laboratory X-ray microscopy, " Proc. SPIE, vol. 8324, no. 1, Mar. 2012, Art. ID 832412.
3. C. Cassidy et al., "Through silicon via reliability, " IEEE Trans. Device Mater. Rel., vol. 12, no. 2, pp. 285-295, Jun. 2012.
4. N. Srivastava, R. V. Joshi, and K. Banerjee, "Carbon nanotube interconnects: Implications for performance, power dissipation and thermal management, " in IEEE Int. Electron Devices Meeting (IEDM) Tech. Dig., Dec. 2005, pp. 249-252.
5. N. G. Shang et al., "High-rate low-temperature growth of vertically aligned carbon nanotubes, " Nanotechnology, vol. 21, no. 50, p. 505604, Dec. 2010.
6. D. Yokoyama et al., "Low-temperature synthesis of multiwalled carbon nanotubes by graphite antenna CVD in a hydrogen-free atmosphere, " Carbon, vol. 48, no. 3, pp. 825-831, Mar. 2010.
7. G. Y. Chen et al., "Growth of carbon nanotubes at temperatures compatible with integrated circuit technologies, " Carbon, vol. 49, no. 1, pp. 280-285, Jan. 2011.
8. A. A. Puretzky et al., "In situ measurements and modeling of carbon nanotube array growth kinetics during chemical vapor deposition, " Appl. Phys. A, vol. 81, no. 2, pp. 223-240, Jul. 2005.
9. T. Wang et al., "Through-silicon vias filled with densified and transferred carbon nanotube forests, " IEEE Electron Device Lett., vol. 33, no. 3, pp. 420-422, Mar. 2012.
10. T. Wang et al., "Formation of three-dimensional carbon nanotube structures by controllable vapor densification, " Mater. Lett., vol. 78, pp. 184-187, Jul. 2012.
11. D. Jiang et al., "Paper-mediated controlled densification and low temperature transfer of carbon nanotube forests for electronic interconnect application, " Microelectron. Eng., vol. 103, pp. 177-180, Mar. 2013.
12. M. D. Volder et al., "Diverse 3D microarchitectures made by capillary forming of carbon nanotubes, " Adv. Mater., vol. 22, no. 39, pp. 4384-4389, 2010.
13. E. J. García et al., "Fabrication of composite microstructures by capillarity-driven wetting of aligned carbon nanotubes with polymers, " Nanotechnology, vol. 18, no. 16, p. 165602, 2007.
14. C. Subramaniam et al., "One hundred fold increase in current carrying capacity in a carbon nanotube-copper composite, " Nature Commun., vol. 4, Jul. 2013, Art. ID 2202.
15. Y. Zhao et al., "Iodine doped carbon nanotube cables exceeding specific electrical conductivity of metals, " Sci. Rep., vol. 1, p. 83, Sep. 2011.