Through-silicon vias filled with densified and transferred carbon nanotube forests

IEEE Electron Device Letters

Volumn 33, Issue 3, 2012, Pages 420-422

  Wang, Teng ^a   Chen, Si ^a,b   Jiang, Di ^a   Fu, Yifeng ^a   Jeppson, Kjell ^a   Ye, Lilei ^c   Liu, Johan ^a,b  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b SHANGHAI UNIVERSITY   (China)

^c SHT SMART HIGH TECH AB   (Sweden)

Author keywords

Carbon nanotubes (CNTs); densification; interconnects; through silicon vias (TSVs); transfer

Indexed keywords

AS-GROWN; CMOS COMPATIBILITY; HIGH TEMPERATURE; LOW TEMPERATURES; MAGNITUDE REDUCTION; NANOTUBE FORESTS; THROUGH SILICON VIAS; THROUGH-SILICON VIAS (TSVS); TRANSFER; TRANSFER PROCESS;

DENSIFICATION; FORESTRY; OPTICAL INTERCONNECTS;

CARBON NANOTUBES;

CARBON; DENSIFICATION; FILLING; FORESTS; SILICON; VAPORS;

EID: 84862815705     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2177804     Document Type: Article

References (15)

1. K. Banerjee, N. Srivastava, C. Xu, and H. Li, "Carbon nanomaterials for next-generation interconnects and passives: Physics, status, and prospects," IEEE Trans. Electron Devices, vol. 56, no. 9, pp. 1799-1821, Sep. 2009.
2. H. Jiang, B. Liu, Y. Huang, and K. C. Hwang, "Thermal expansion of single wall carbon nanotubes," J. Eng. Mater. Technol., vol. 126, no. 3, pp. 265-270, Jul. 2004. (Pubitemid 40122740)
3. T. Ragab and C. Basaran, "Joule heating in single-walled carbon nanotubes," J. Appl. Phys., vol. 106, no. 6, pp. 0637051-0637055, Sep. 2009.
4. P. G. Collins, M. Hersam, M. Arnold, R. Martel, and P. Avouris, "Current saturation and electrical breakdown in multiwalled carbon nanotubes," Phys. Rev. Lett., vol. 86, no. 14, pp. 3128-3131, Apr. 2001. (Pubitemid 32317878)
5. A. Naeemi and J. D. Meindl, "Compact physical models for multiwall carbon-nanotube interconnects," IEEE Electron Device Lett., vol. 27, no. 5, pp. 338-340, May 2006.
6. B. C. Kim, S. Kannan, A. Gupta, F. Mohammed, and B. Ahn, "Development of carbon nanotube based through-silicon vias," J. Nanotechnol. Eng. Med., vol. 1, no. 2, pp. 021012-1-021012-8, May 2010.
7. Y. Awano, S. Sato, M. Nihei, T. Sakai, Y. Ohno, and T. Mizutani, "Carbon nanotubes for VLSI: Interconnect and transistor applications," Proc. IEEE, vol. 98, no. 12, pp. 2015-2031, Dec. 2010.
8. T.Wang, K. Jeppson, L. Ye, and J. Liu, "Carbon-nanotube through-silicon via interconnects for three-dimensional integration," Small, vol. 7, no. 16, pp. 2313-2317, Aug. 2011.
9. A. A. Puretzky, D. B. Geohegan, S. Jesse, I. N. Ivanov, and G. Eres, "In situ measurements and modeling of carbon nanotube array growth kinetics during chemical vapor deposition," Appl. Phys. A, Mater. Sci. Process., vol. 81, no. 2, pp. 223-240, Jul. 2005. (Pubitemid 40683694)
10. J. H. Lau, "Evolution and outlook of TSV and 3D IC/Si integration," in Proc. 12th EPTC, 2010, pp. 560-570.
11. R. R. Tummala, "Moore's law meets its match," IEEE Spectr., vol. 43, no. 6, pp. 44-49, Jun. 2006. (Pubitemid 43891335)
12. T. Wang, K. Jeppson, and J. Liu, "Dry densification of carbon nanotube bundles," Carbon, vol. 48, no. 13, pp. 3795-3801, Nov. 2010.
13. M. De Volder, S. H. Tawfick, S. J. Park, D. Copic, Z. Zhao, W. Lu, and A. J. Hart, "Diverse 3D microarchitectures made by capillary forming of carbon nanotubes," Adv. Mater., vol. 22, no. 39, pp. 4384-4389, Oct. 2010.
14. Y. Fu, Y. Qin, T. Wang, S. Chen, and J. Liu, "Ultrafast transfer of metalenhanced carbon nanotubes at low temperature for large-scale electronics assembly," Adv. Mater., vol. 22, no. 44, pp. 5039-5042, Nov. 2010.
15. T. Wang, K. Jeppson, N. Olofsson, E. E. B. Campbell, and J. Liu, "Through silicon vias filled with planarized carbon nanotube bundles," Nanotechnology, vol. 20, no. 48, p. 485 203, Dec. 2009.