Carbon nanotube growth for through silicon via application

Nanotechnology

Volumn 24, Issue 12, 2013, Pages

  Xie, R ^a   Zhang, C ^a   Van Der Veen, M H ^b   Arstila, K ^b   Hantschel, T ^b   Chen, B ^a   Zhong, G ^a   Robertson, J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBE GROWTH; CARBON NANOTUBES (CNT); CATALYST DEPOSITION; CATALYST PREPARATION METHODS; ELECTRICAL CHARACTERIZATION; THREE DIMENSIONAL INTEGRATED CIRCUITS; THROUGH-SILICON VIA (TSV) TECHNOLOGIES; THROUGH-SILICON-VIA;

ASPECT RATIO; FILLING;

MULTIWALLED CARBON NANOTUBES (MWCN);

EID: 84874896848     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/24/12/125603     Document Type: Article

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