Fabrication of high aspect ratio through-wafer copper interconnects by reverse pulse electroplating

Journal of Micromechanics and Microengineering

Volumn 19, Issue 6, 2009, Pages

  Gu, Changdong ^a   Xu, Hui ^b   Zhang, Tong Yi ^a,b  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER INTERCONNECTS; DEEP REACTIVE ION ETCHING; ELECTROPLATING PROCESS; HIGH ASPECT RATIO; LOCAL CURRENT DENSITY; PULSE ELECTROPLATING; VOID-FREE;

COPPER; OPTICAL INTERCONNECTS; PHOTORESISTS; PRESSURE DROP; REACTIVE ION ETCHING;

ASPECT RATIO;

EID: 70349973201     PISSN: 09601317     EISSN: 13616439     Source Type: Journal    
DOI: 10.1088/0960-1317/19/6/065011     Document Type: Article

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