Ultrashort Channel Length Black Phosphorus Field-Effect Transistors

ACS Nano

Volumn 9, Issue 9, 2015, Pages 9236-9243

  Miao, Jinshui ^a   Zhang, Suoming ^a   Cai, Le ^a   Scherr, Martin ^a   Wang, Chuan ^a  

^a Michigan State University   (United States)

Author keywords

2D semiconductors; black phosphorus; device scaling; field effect transistors; ultrashort channel length

Indexed keywords

EVAPORATION; GATE DIELECTRICS; PHOSPHORUS; TRANSISTORS;

AMBIENT CONDITIONS; CHANNEL MATERIALS; DEVICE PERFORMANCE; DEVICE-SCALING; EVAPORATION PROCESS; GATE DIELECTRIC LAYERS; SHORT-CHANNEL EFFECT; ULTRASHORT CHANNELS;

FIELD EFFECT TRANSISTORS;

EID: 84942243741     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/acsnano.5b04036     Document Type: Article

References (53)

1. Taur, Y. CMOS Design near the Limit of Scaling IBM J. Res. Dev. 2002, 46, 213-222 10.1147/rd.462.0213
2. Chau, R.; Kavalieros, J.; Doyle, B.; Murthy, A.; Paulsen, N.; Lionberger, D.; Barlage, D.; Arghavani, R.; Roberds, B.; Doczy, M. In a 50 nm Depleted-Substrate CMOS Transistor (DST) IEDM Technol. Dig. 2001, 621-624
3. Luisier, M.; Lundstrom, M.; Antoniadis, D. A.; Bokor, J. Ultimate Device Scaling: Intrinsic Performance Comparisons of Carbon-Based, InGaAs, and Si Field-Effect Transistors for 5 nm Gate Length IEDM Technol. Dig. 2011, 251-254 10.1109/IEDM.2011.6131531
4. Fang, H.; Chuang, S.; Chang, T. C.; Takei, K.; Takahashi, T.; Javey, A. High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts Nano Lett. 2012, 12, 3788-3792 10.1021/nl301702r
5. Ko, H.; Takei, K.; Kapadia, R.; Chuang, S.; Fang, H.; Leu, P. W.; Ganapathi, K.; Plis, E.; Kim, H. S.; Chen, S.-Y. et al. Ultrathin Compound Semiconductor on Insulator Layers for High-Performance Nanoscale Transistors Nature 2010, 468, 286-289 10.1038/nature09541
6. Radisavljevic, B.; Radenovic, A.; Brivio, J.; Giacometti, V.; Kis, A. Single-Layer MoS2 Transistors Nat. Nanotechnol. 2011, 6, 147-150 10.1038/nnano.2010.279
7. Liu, H.; Neal, A. T.; Ye, P. D. Channel Length Scaling of MoS2 MOSFETs ACS Nano 2012, 6, 8563-8569 10.1021/nn303513c
8. Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Zhang, Y.; Dubonos, S. V.; Grigorieva, I. V.; Firsov, A. A. Electric Field Effect in Atomically Thin Carbon Films Science 2004, 306, 666-669 10.1126/science.1102896
9. Zhang, Y.; Tan, Y. W.; Stormer, H. L.; Kim, P. Experimental Observation of the Quantum Hall Effect and Berry's Phase in Graphene Nature 2005, 438, 201-204 10.1038/nature04235
10. Li, X.; Cai, W.; An, J.; Kim, S.; Nah, J.; Yang, D.; Piner, R.; Velamakanni, A.; Jung, I.; Tutuc, E. Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils Science 2009, 324, 1312-1314 10.1126/science.1171245
11. Liao, L.; Lin, Y.-C.; Bao, M.; Cheng, R.; Bai, J.; Liu, Y.; Qu, Y.; Wang, K. L.; Huang, Y.; Duan, X. High-Speed Graphene Transistors with a Self-Aligned Nanowire Gate Nature 2010, 467, 305-308 10.1038/nature09405
12. Wu, Y.; Lin, Y. M.; Bol, A. A.; Jenkins, K. A.; Xia, F.; Farmer, D. B.; Zhu, Y.; Avouris, P. High-Frequency, Scaled Graphene Transistors on Diamond-Like Carbon Nature 2011, 472, 74-78 10.1038/nature09979
13. Song, L.; Ci, L.; Lu, H.; Sorokin, P. B.; Jin, C.; Ni, J.; Kvashnin, A. G.; Kvashnin, D. G.; Lou, J.; Yakobson, B. I. Large Scale Growth and Characterization of Atomic Hexagonal Boron Nitride Layers Nano Lett. 2010, 10, 3209-3215 10.1021/nl1022139
14. Jariwala, D.; Sangwan, V. K.; Lauhon, L. J.; Marks, T. J.; Hersam, M. C. Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides ACS Nano 2014, 8, 1102-1120 10.1021/nn500064s
15. Chuang, H.-J.; Tan, X.; Ghimire, N. J.; Perera, M. M.; Chamlagain, B.; Cheng, M. M.-C.; Yan, J.; Mandrus, D.; Tománek, D.; Zhou, Z. High Mobility WSe2 p-and n-Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts Nano Lett. 2014, 14, 3594-3601 10.1021/nl501275p
16. Kwon, J.; Hong, Y. K.; Han, G.; Omkaram, I.; Choi, W.; Kim, S.; Yoon, Y. Giant Photoamplification in Indirect-Bandgap Multilayer MoS2 Phototransistors with Local Bottom-Gate Structures Adv. Mater. 2015, 27, 2224-2230 10.1002/adma.201404367
17. Yang, L.; Zhong, D.; Zhang, J.; Yan, Z.; Ge, S.; Du, P.; Jiang, J.; Sun, D.; Wu, X.; Fan, Z. Optical Properties of Metal-Molybdenum Disulfide Hybrid Nanosheets and Their Application for Enhanced Photocatalytic Hydrogen Evolution ACS Nano 2014, 8, 6979-6985 10.1021/nn501807y
18. Zhang, K.; Hu, S.; Zhang, Y.; Zhang, T.; Zhou, X.; Sun, Y.; Li, T.-X.; Fan, H. J.; Shen, G.; Chen, X. Self-Induced Uniaxial Strain in MoS2 Monolayers with Local van der Waals-Stacked Interlayer Interactions ACS Nano 2015, 9, 2704-2710 10.1021/acsnano.5b00547
19. Bao, W.; Cai, X.; Kim, D.; Sridhara, K.; Fuhrer, M. S. High Mobility Ambipolar MoS2 Field-Effect Transistors: Substrate and Dielectric Effects Appl. Phys. Lett. 2013, 102, 042104 10.1063/1.4789365
20. Das, S.; Chen, H. Y.; Penumatcha, A. V.; Appenzeller, J. High Performance Multilayer MoS2 Transistors with Scandium Contacts Nano Lett. 2013, 13, 100-105 10.1021/nl303583v
21. Liu, H.; Si, M.; Deng, Y.; Neal, A. T.; Du, Y.; Najmaei, S.; Ajayan, P. M.; Lou, J.; Ye, P. D. Switching Mechanism in Single-Layer Molybdenum Disulfide Transistors: An Insight into Current Flow across Schottky Barriers ACS Nano 2014, 8, 1031-1038 10.1021/nn405916t
22. Liu, H.; Si, M.; Najmaei, S.; Neal, A. T.; Du, Y.; Ajayan, P. M.; Lou, J.; Ye, P. D. Statistical Study of Deep Submicron Dual-Gated Field-Effect Transistors on Monolayer Chemical Vapor Deposition Molybdenum Disulfide Films Nano Lett. 2013, 13, 2640-2646 10.1021/nl400778q
23. Zhang, Y.; Tang, T. T.; Girit, C.; Hao, Z.; Martin, M. C.; Zettl, A.; Crommie, M. F.; Shen, Y. R.; Wang, F. Direct Observation of a Widely Tunable Bandgap in Bilayer Graphene Nature 2009, 459, 820-823 10.1038/nature08105
24. Yoon, Y.; Ganapathi, K.; Salahuddin, S. How Good Can Monolayer MoS2 Transistors Be? Nano Lett. 2011, 11, 3768-3773 10.1021/nl2018178
25. Avsar, A.; Vera-Marun, I. J.; Tan, J. Y.; Watanabe, K.; Taniguchi, T.; Castro Neto, A. H.; Özyilmaz, B. Air Stable Transport in Graphene Contacted, Fully Encapsulated Ultra Thin Black Phosphorus-Based Field-Effect Transistors ACS Nano 2015, 9, 4138-4145 10.1021/acsnano.5b00289
26. Saito, Y.; Iwasa, Y. Ambipolar Insulator-to-Metal Transition in Black Phosphorus by Ionic-Liquid Gating ACS Nano 2015, 9, 3192-3198 10.1021/acsnano.5b00497
27. Deng, Y.; Luo, Z.; Conrad, N. J.; Liu, H.; Gong, Y.; Najmaei, S.; Ajayan, P. M.; Lou, J.; Xu, X.; Ye, P. D. Black Phosphorus-Monolayer MoS2 van der Waals Heterojunction p-n Diode ACS Nano 2014, 8, 8292-8299 10.1021/nn5027388
28. Koenig, S. P.; Doganov, R. A.; Schmidt, H.; Castro Neto, A. H.; Özyilmaz, B. Electric Field Effect in Ultrathin Black Phosphorus Appl. Phys. Lett. 2014, 104, 103106 10.1063/1.4868132
29. Na, J.; Lee, Y. T.; Lim, J. A.; Hwang, D. K.; Kim, G.-T.; Choi, W. K.; Song, Y.-W. Few-Layer Black Phosphorus Field-Effect Transistors with Reduced Current Fluctuation ACS Nano 2014, 8, 11753-11762 10.1021/nn5052376
30. Qiao, J.; Kong, X.; Hu, Z. X.; Yang, F.; Ji, W. High-Mobility Transport Anisotropy and Linear Dichroism in Few-Layer Black Phosphorus Nat. Commun. 2014, 5, 4475 10.1038/ncomms5475
31. Yasaei, P.; Kumar, B.; Foroozan, T.; Wang, C.; Asadi, M.; Tuschel, D.; Indacochea, J. E.; Klie, R. F.; Salehi-Khojin, A. High-Quality Black Phosphorus Atomic Layers by Liquid-Phase Exfoliation Adv. Mater. 2015, 27, 1887-1892 10.1002/adma.201405150
32. Liu, X.; Wood, J. D.; Chen, K.-S.; Cho, E.; Hersam, M. C. In Situ Thermal Decomposition of Exfoliated Two-Dimensional Black Phosphorus J. Phys. Chem. Lett. 2015, 6, 773-778 10.1021/acs.jpclett.5b00043
33. Ling, X.; Wang, H.; Huang, S.; Xia, F.; Dresselhaus, M. S. The Renaissance of Black Phosphorus Proc. Natl. Acad. Sci. U. S. A. 2015, 112, 4523-4530 10.1073/pnas.1416581112
34. Kang, J.; Wood, J. D.; Wells, S. A.; Lee, J.-H.; Liu, X.; Chen, K.-S.; Hersam, M. C. Solvent Exfoliation of Electronic-Grade, Two-Dimensional Black Phosphorus ACS Nano 2015, 9, 3596-3604 10.1021/acsnano.5b01143
35. Xiang, D.; Han, C.; Wu, J.; Zhong, S.; Liu, Y.; Lin, J.; Zhang, X.-A.; Hu, W. P.; Özyilmaz, B.; Neto, A. C. Surface Transfer Doping Induced Effective Modulation on Ambipolar Characteristics of Few-Layer Black Phosphorus Nat. Commun. 2015, 6, 6485 10.1038/ncomms7485
36. Ribeiro, H. B.; Pimenta, M. A.; de Matos, C. J.; Moreira, R. L.; Rodin, A. S.; Zapata, J. D.; de Souza, E. A.; Castro Neto, A. H. Unusual Angular Dependence of the Raman Response in Black Phosphorus ACS Nano 2015, 9, 4270-4276 10.1021/acsnano.5b00698
37. Li, L.; Yu, Y.; Ye, G. J.; Ge, Q.; Ou, X.; Wu, H.; Feng, D.; Chen, X. H.; Zhang, Y. Black Phosphorus Field-Effect Transistors Nat. Nanotechnol. 2014, 9, 372-377 10.1038/nnano.2014.35
38. Das, S.; Zhang, W.; Demarteau, M.; Hoffmann, A.; Dubey, M.; Roelofs, A. Tunable Transport Gap in Phosphorene Nano Lett. 2014, 14, 5733-5739 10.1021/nl5025535
39. Kamalakar, M. V.; Madhushankar, B.; Dankert, A.; Dash, S. P. Low Schottky Barrier Black Phosphorus Field-Effect Devices with Ferromagnetic Tunnel Contacts Small 2015, 11, 2209-2216 10.1002/smll.201402900
40. Liu, H.; Neal, A. T.; Zhu, Z.; Luo, Z.; Xu, X.; Tománek, D.; Ye, P. D. Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility ACS Nano 2014, 8, 4033-4041 10.1021/nn501226z
41. Wang, H.; Wang, X.; Xia, F.; Wang, L.; Jiang, H.; Xia, Q.; Chin, M. L.; Dubey, M.; Han, S. J. Black Phosphorus Radio-Frequency Transistors Nano Lett. 2014, 14, 6424-6429 10.1021/nl5029717
42. Engel, M.; Steiner, M.; Avouris, P. Black Phosphorus Photodetector for Multispectral, High-Resolution Imaging Nano Lett. 2014, 14, 6414-6417 10.1021/nl502928y
43. Buscema, M.; Groenendijk, D. J.; Blanter, S. I.; Steele, G. A.; van der Zant, H. S.; Castellanos-Gomez, A. Fast and Broadband Photoresponse of Few-Layer Black Phosphorus Field-Effect Transistors Nano Lett. 2014, 14, 3347-3352 10.1021/nl5008085
44. Buscema, M.; Groenendijk, D. J.; Steele, G. A.; van der Zant, H. S.; Castellanos-Gomez, A. Photovoltaic Effect in Few-Layer Black Phosphorus PN Junctions Defined by Local Electrostatic Gating Nat. Commun. 2014, 5, 4651 10.1038/ncomms5651
45. Hong, T.; Chamlagain, B.; Lin, W.; Chuang, H. J.; Pan, M.; Zhou, Z.; Xu, Y. Q. Polarized Photocurrent Response in Black Phosphorus Field-Effect Transistors Nanoscale 2014, 6, 8978-8983 10.1039/C4NR02164A
46. Youngblood, N.; Chen, C.; Koester, S. J.; Li, M. Waveguide-Integrated Black Phosphorus Photodetector with High Responsivity and Low Dark Current Nat. Photonics 2015, 9, 247-252 10.1038/nphoton.2015.23
47. Zhang, X.; Xie, H.; Liu, Z.; Tan, C.; Luo, Z.; Li, H.; Lin, J.; Sun, L.; Chen, W.; Xu, Z. et al. Black Phosphorus Quantum Dots Angew. Chem., Int. Ed. 2015, 54, 3653-3657 10.1002/anie.201409400
48. Zhu, W.; Yogeesh, M. N.; Yang, S.; Aldave, S. H.; Kim, J. S.; Sonde, S.; Tao, L.; Lu, N.; Akinwande, D. Flexible Black Phosphorus Ambipolar Transistors, Circuits and Am Demodulator Nano Lett. 2015, 15, 1883-1890 10.1021/nl5047329
49. Du, Y.; Liu, H.; Deng, Y.; Ye, P. D. Device Perspective for Black Phosphorus Field-Effect Transistors: Contact Resistance, Ambipolar Behavior, and Scaling ACS Nano 2014, 8, 10035-10042 10.1021/nn502553m
50. Javey, A.; Qi, P.; Wang, Q.; Dai, H. Ten-to 50-nm-Long Quasi-Ballistic Carbon Nanotube Devices Obtained without Complex Lithography Proc. Natl. Acad. Sci. U. S. A. 2004, 101, 13408-13410 10.1073/pnas.0404450101
51. Wood, J. D.; Wells, S. A.; Jariwala, D.; Chen, K. S.; Cho, E.; Sangwan, V. K.; Liu, X.; Lauhon, L. J.; Marks, T. J.; Hersam, M. C. Effective Passivation of Exfoliated Black Phosphorus Transistors against Ambient Degradation Nano Lett. 2014, 14, 6964-6970 10.1021/nl5032293
52. Xia, F.; Wang, H.; Jia, Y. Rediscovering Black Phosphorus as an Anisotropic Layered Material for Optoelectronics and Electronics Nat. Commun. 2014, 5, 4458 10.1038/ncomms5458
53. Xia, F.; Perebeinos, V.; Lin, Y. M.; Wu, Y.; Avouris, P. The Origins and Limits of Metal-Graphene Junction Resistance Nat. Nanotechnol. 2011, 6, 179-184 10.1038/nnano.2011.6