Switching mechanism in single-layer molybdenum disulfide transistors: An insight into current flow across Schottky barriers

ACS Nano

Volumn 8, Issue 1, 2014, Pages 1031-1038

  Liu, Han ^a   Si, Mengwei ^a   Deng, Yexin ^a   Neal, Adam T ^a   Du, Yuchen ^a   Najmaei, Sina ^b   Ajayan, Pulickel M ^b   Lou, Jun ^b   Ye, Peide D ^a  

^a PURDUE UNIVERSITY   (United States)

^b Rice University   (United States)

Author keywords

MoS2 transistors; Schottky barrier transistor; short channel effect; transfer length

Indexed keywords

CONTACT RESISTIVITIES; DRAIN-INDUCED BARRIER; EFFECTIVE BARRIER HEIGHTS; MOLYBDENUM DISULFIDE; SCHOTTKY BARRIER TRANSISTORS; SHORT-CHANNEL DEVICES; SHORT-CHANNEL EFFECT; TRANSFER LENGTHS;

FIELD EFFECT TRANSISTORS; MOLYBDENUM; MOLYBDENUM COMPOUNDS; SCHOTTKY BARRIER DIODES;

TRANSISTORS;

EID: 84893478331     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn405916t     Document Type: Article

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