Black phosphorus radio-frequency transistors

Nano Letters

Volumn 14, Issue 11, 2014, Pages 6424-6429

  Wang, Han ^a   Wang, Xiaomu ^b   Xia, Fengnian ^b   Wang, Luhao ^a   Jiang, Hao ^c   Xia, Qiangfei ^c   Chin, Matthew L ^d   Dubey, Madan ^d   Han, Shu Jen ^e  

^a Ming Hsieh Department of Electrical Engineering University of Southern California ^*  (United States)

^b Yale University   (United States)

^c University of Massachusetts   (United States)

^d U S ARMY RESEARCH LABORATORY   (United States)

^e IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

2D materials; Black phosphorus; graphene; phosphorene; radio frequency; transistor

Indexed keywords

AMPLIFICATION; CARRIER MOBILITY; ENERGY GAP; FIELD EFFECT TRANSISTORS; GRAPHENE; HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; NANOELECTRONICS; PHOSPHORUS; THIN FILMS; TRANSISTORS;

GAIN CUTOFF FREQUENCY; HIGH CARRIER MOBILITY; HIGH-FREQUENCY CHARACTERIZATION; HIGH-FREQUENCY ELECTRONICS; MAXIMUM OSCILLATION FREQUENCY; PHOSPHORENE; RADIO FREQUENCIES; THIN FILM ELECTRONICS;

CUTOFF FREQUENCY;

EID: 84910110409     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl5029717     Document Type: Article

References (42)

1. Powell, M. J. The physics of amorphous-silicon thin-film transistors IEEE Trans. Electron Devices 1989, 36, 2753-2763
2. Street, R. A. Thin-film transistors Adv. Mater. 2009, 21, 2007-2022
3. Hawkins, W. G. Polycrystalline-silicon device technology for large-area electronics IEEE Trans. Electron Devices 1986, 33, 477-481
4. Forrest, S. R. The path to ubiquitous and low-cost organic electronic appliances on plastic Nature 2004, 428, 911-918
5. Dimitrakopoulos, C. D.; Mascaro, D. J. Organic thin-film transistors: A review of recent advances IBM J. Res. Dev. 2004, 45, 11-27
6. Nomura, K. Amorphous oxide semiconductors for high-performance flexible thin-film transistors Jpn. J. Appl. Phys. 2006, 45, 4303
7. Carcia, P. F.; McLean, R. S.; Reilly, M. H.; Nunes, G., Jr. Transparent ZnO thin-film transistor fabricated by RF magnetron sputtering Appl. Phys. Lett. 2003, 82, 1117
8. Meric, I.; Baklitskaya, N.; Kim, P.; Shepard, K. L. RF Performance of Top-Gated, Zero-Bandgap Graphene Field-Effect Transistors, Proceedings of the Electron Devices Meeting IEDM, San Francisco, CA, December 15-17, 2008; IEEE International: Piscataway, NJ, 2008.
9. Lin, Y.-M.; Dimitrakopoulos, C. D.; Jenkins, K. A.; Farmer, D. B.; Chiu, H.-Y.; Grill, A.; Avouris, P. 100-GHz transistors from wafer-scale epitaxial graphene Science 2010, 327, 662
10. Wu, Y.; Lin, Y.; Bol, A. A.; Jenkins, K. A.; Xia, F.; Farmer, D. B.; Zhu, Y.; Avouris, P. High-frequency, scaled graphene transistors on diamond-like carbon Nature 2011, 472, 74-78
11. Liao, L. High-speed graphene transistors with a self-aligned nanowire gate Nature 2010, 467, 305-308
12. Wang, H.; Nezich, D.; Kong, J.; Palacios, T. Graphene frequency multipliers IEEE Electron Device Lett. 2009, 30, 547-549
13. Wang, H.; Hsu, A.; Wu, J.; Kong, J.; Palacios, T. Graphene-based ambipolar RF mixers IEEE Electron Device Lett. 2010, 31, 906-908
14. Han, S.-J.; Valdes-Garcia, A.; Oida, S.; Jenkins, K. A.; Haensch, W. Graphene radio frequency receiver integrated circuit Nat. Commun. 2014, 5, 3086 10.1038/ncomms4086
15. Wang, H. Chapter 4. In Two-Dimensional Materials for Electronic Applications. Ph. D. Thesis, Massachusetts Institute of Technology, Cambridge, MA, 2014. http://dspace.mit.edu/handle/1721.1/84899.
16. Schwierz, F.; Liou, J. J. Modern Microwave Transistors: Theory, Design, and Performance; 1 st ed.; Wiley-Interscience: Hoboken, NJ, 2002.
17. T of millimeter-wave MODFETs IEEE Electron Device Lett. 1989, 10, 291-293
18. Zhu, W.; Low, T.; Lee, Y.-H.; Wang, H.; Farmer, D. B.; Kong, J.; Xia, F.; Avouris, P. Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition Nat. Commun. 2014, 5, 3087 10.1038/ncomms4087
19. 2 monolayers and device applications ACS Nano 2014, 8, 923-930
20. Keyes, R. The electrical properties of black phosphorus Phys. Rev. 1953, 92, 580-584
21. Warschauer, D. Electrical and optical properties of crystalline black phosphorus J. Appl. Phys. 1963, 34, 1853-1860
22. Jamieson, J. Crystal structures adopted by black phosphorus at high pressures Science 1963, 139, 1291-1292
23. Wittig, J.; Matthias, B. T. Superconducting phosphorus Science 1968, 160, 994-995
24. Maruyama, Y.; Suzuki, S.; Kobayashi, K.; Tanuma, S. Synthesis and some properties of black phosphorus single crystals Physica 1981, 105B, 99-102
25. Li, L. Black phosphorus field-effect transistors Nat. Nanotechnol. 2014, 9, 372-377
26. Xia, F.; Wang, H.; Jia, Y. Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics Nat. Commun. 2014, 5, 4458 10.1038/ncomms5458
27. Liu, H. Phosphorene: An unexplored 2D semiconductor with a high hole mobility ACS Nano 2014, 8, 4033-4041
28. Koenig, S.; Doganov, R.; Schmidt, H.; Castro Neto, A.; Ozyilmaz, B. Electric field effect in ultrathin black phosphorus Appl. Phys. Lett. 2014, 104, 103106
29. Morita, A. Semiconducting black phosphorus Appl. Phys. A: Mater. Sci. Process. 1986, 39, 227-242
30. Akahama, Y.; Kobayashi, M.; Kawamura, H. Raman study of black phosphorus up to 13 GPa Solid State Commun. 1997, 104, 311-315
31. Fei, R.; Yang, L. Lattice vibrational modes and Raman scattering spectra of strained phospherene Appl. Phys. Lett. 2014, 105, 083120
32. Xia, F.; Farmer, D. B.; Lin, Y.-M.; Avouris, P. Graphene field-effect transistors with high on/off current ratio and large transport band gap at room temperature Nano Lett. 2010, 10, 715-718
33. Collier, R. J.;; Skinner, A. D. Microwave Measurements, 3 rd ed., The Institution of Engineering and Technology: London, 2007.
34. Koolen, M. C. A.; Geelen, J. A.; Versleijen, M. P. J. An Improved De-Embedding Technique for on-Wafer High-Frequency Characterization, Proceedings of the Bipolar Circuits and Technology Meeting 1991, Minneapolis, MN, September 9-10, 1991; IEEE: New York, 1991; 188-191.
35. Kim, J.-Y.; Choi, M.-K.; Lee, S.-H. A 'thru-short-open' de-embedding method for accurate on-wafer RF measurements of nano-scale MOSFETs J. Semicond. Technol. Sci. 2012, 12, 53-58
36. T Proceedings of the IEEE 1969, 57 (12) 2159-2159
37. S-parameter techniques for faster, more accurate network design. HP Application Note 95-1; Hewlett-Packard: Palo Alto, CA, 1967. http://www.hparchive.com/Application-Notes/HP-AN-95-1.pdf.
38. Mason, S. J. Power gain in feedback amplifiers IRE Trans. Circuit Theory 1954, CT-1, 20-25
39. Gupta, M. S. Power gain in feedback amplifiers, a classic revisited IEEE Trans. Microwave Theory Tech. 1992, 40, 5
40. Lin, Y.-M.; Jenkins, K. A.; Valdes-Garcia, A.; Small, J. P.; Farmer, D. B.; Avouris, P. Operation of graphene transistors at gigahertz frequencies Nano Lett. 2009, 9, 422-426
41. Cheng, R.; Jiang, S.; Chen, Y.; Liu, Y.; Weiss, N.; Cheng, H.-C.; Wu, H.; Huang, Y.; Duan, X. Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics Nature Commun. 2014, 5, 5143 10.1038/ncomms6143
42. 2 transistors operating at gigahertz frequencies Nano Lett. 2014, 14, 5905-5911