Giant Photoamplification in Indirect-Bandgap Multilayer MoS2 Phototransistors with Local Bottom-Gate Structures

Advanced Materials

Volumn 27, Issue 13, 2015, Pages 2224-2230

  Kwon, Junyeon ^a   Hong, Young Ki ^a   Han, Gyuchull ^b   Omkaram, Inturu ^a   Choi, Woong ^c   Kim, Sunkook ^a   Yoon, Youngki ^b  

^a Kyung Hee University   (South Korea)

^b UNIVERSITY OF WATERLOO   (Canada)

^c Kookmin University   (South Korea)

Author keywords

local bottom gated structure; MoS2; phototransistors; responsivity; transition metal dichalcogenide

Indexed keywords

ENERGY GAP; MULTILAYERS; PHOTOTRANSISTORS; TRANSITION METALS;

BOTTOM GATE; GATE UNDERLAP; GATED STRUCTURES; MOS2; ORDERS OF MAGNITUDE; PHOTORESPONSIVITY; RESPONSIVITY; TRANSITION METAL DICHALCOGENIDES;

MOLYBDENUM COMPOUNDS;

EID: 85028140126     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201404367     Document Type: Article

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