Ambipolar insulator-to-metal transition in black phosphorus by ionic-liquid gating

ACS Nano

Volumn 9, Issue 3, 2015, Pages 3192-3198

  Saito, Yu ^a   Iwasa, Yoshihiro ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b RIKEN Center for Emergent Matter Science   (Japan)

Author keywords

ambipolar; black phosphorus; capacitance; electric double layer transistor (EDLT); insulator to metal transition; localization; two dimensional (2D) materials

Indexed keywords

BLACK PHOSPHORUS; CAPACITANCE; ELECTRIC FIELDS; ELECTROCHEMISTRY; ENERGY GAP; HALL MOBILITY; HOLE MOBILITY; IONIC LIQUIDS; PHOSPHORUS; SEMICONDUCTOR JUNCTIONS; TUNNEL JUNCTIONS;

AMBIPOLAR; ELECTRIC DOUBLE-LAYER TRANSISTORS; INSULATOR-TO-METAL TRANSITIONS; LOCALIZATION; TWO DIMENSIONAL (2 D);

METAL INSULATOR TRANSITION;

EID: 84925665464     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/acsnano.5b00497     Document Type: Article

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