Self-induced uniaxial strain in MoS2 monolayers with local van der waals-stacked interlayer interactions

ACS Nano

Volumn 9, Issue 3, 2015, Pages 2704-2710

  Zhang, Kenan ^a,b,d   Hu, Shuhong ^a   Zhang, Yun ^a   Zhang, Tianning ^a   Zhou, Xiaohao ^a   Sun, Yan ^a   Li, Tian Xin ^a   Fan, Hong Jin ^c   Shen, Guozhen ^b   Chen, Xin ^a   Dai, Ning ^a,d,e  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

^c NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^d UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^e Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering   (China)

Author keywords

first principles plane wave calculations; MoS2; Raman; self induced; uniaxial strain; van der Waals stacking

Indexed keywords

CALCULATIONS; GRAPHENE; HETEROJUNCTIONS; LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; MONOLAYERS; VAN DER WAALS FORCES;

MOS2; PLANE WAVE CALCULATIONS; RAMAN; SELF-INDUCED; UNI-AXIAL STRAINS; VAN DER WAALS;

STRAIN;

EID: 84925597275     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/acsnano.5b00547     Document Type: Article

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