Probing resistivity and doping concentration of semiconductors at the nanoscale using scanning microwave microscopy

Nanoscale

Volumn 7, Issue 35, 2015, Pages 14715-14722

  Brinciotti, Enrico ^a   Gramse, Georg ^b   Hommel, Soeren ^c   Schweinboeck, Thomas ^c   Altes, Andreas ^c   Fenner, Matthias A ^a   Smoliner, Juergen ^d   Kasper, Manuel ^b   Badino, Giorgio ^a   Tuca, Silviu Sorin ^b   Kienberger, Ferry ^a  

^a KEYSIGHT TECHNOLOGIES   (United States)

^b JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^c INFINEON TECHNOLOGIES AG   (Germany)

^d VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CAPACITANCE; EXTRACTION;

CALIBRATION SAMPLES; DATA-SHEET VALUES; DOPING CONCENTRATION; MICROWAVE PENETRATION; QUANTITATIVE AGREEMENT; REFLECTION MEASUREMENTS; RESISTANCE VALUES; SCANNING MICROWAVE MICROSCOPIES;

SEMICONDUCTOR DOPING;

EID: 84940416818     PISSN: 20403364     EISSN: 20403372     Source Type: Journal    
DOI: 10.1039/c5nr04264j     Document Type: Article

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