Calibrated complex impedance and permittivity measurements with scanning microwave microscopy

Nanotechnology

Volumn 25, Issue 14, 2014, Pages

  Gramse, G ^a   Kasper, M ^a   Fumagalli, L ^c,d   Gomila, G ^c,d   Hinterdorfer, P ^a   Kienberger, F ^b  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^b Agilent Technologies Osterrreich GmbH   (Austria)

^c UNIVERSITY OF BARCELONA   (Spain)

^d INSTITUTE FOR BIOENGINEERING OF CATALONIA IBEC   (Spain)

Author keywords

complex impedance; dielectric constant; nanotechnology: calibration; resistivity; scanning microwave microscopy

Indexed keywords

CALIBRATION; CAPACITANCE; ELECTRIC CONDUCTIVITY; NANOTECHNOLOGY; PERMITTIVITY; PERMITTIVITY MEASUREMENT; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SUBSTRATES;

CALIBRATION PROCEDURE; CALIBRATION SAMPLES; CAPACITANCE-VOLTAGE SPECTROSCOPY; COMPLEX IMPEDANCE; COMPLEX IMPEDANCE MEASUREMENTS; CONDUCTIVE SUBSTRATES; SCANNING MICROWAVE MICROSCOPIES; STRAY CAPACITANCES;

SCANNING;

EID: 84896303957     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/25/14/145703     Document Type: Article

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