Calibrated nanoscale dopant profiling using a scanning microwave microscope

Journal of Applied Physics

Volumn 111, Issue 1, 2012, Pages

  Huber, H P ^a   Humer, I ^b   Hochleitner, M ^a   Fenner, M ^c   Moertelmaier, M ^c   Rankl, C ^c   Imtiaz, A ^d   Wallis, T M ^d   Tanbakuchi, H ^c   Hinterdorfer, P ^a   Kabos, P ^d   Smoliner, J ^b   Kopanski, J J ^d   Kienberger, F ^c  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

^b VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^c AGILENT TECHNOLOGIES   (United States)

^d NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSOLUTE ACCURACY; ATOMIC FORCE MICROSCOPES; CALIBRATION ACCURACY; CALIBRATION CURVES; CALIBRATION SAMPLES; CAPACITANCE SPECTROSCOPY; CAPACITANCE-VOLTAGE CURVE; DOPANT CONCENTRATIONS; DOPANT PROFILING; DOPING CONCENTRATION; MODELING APPROACH; NANO SCALE; OXIDE THICKNESS; P-N JUNCTION; POTENTIAL APPLICATIONS; SCANNING MICROWAVE MICROSCOPES; SEMICONDUCTOR DEVICE PERFORMANCE; SPATIALLY RESOLVED; VECTOR NETWORK ANALYZERS;

ATOMIC FORCE MICROSCOPY; CALIBRATION; CAPACITANCE; ELECTRIC NETWORK ANALYZERS; FAILURE ANALYSIS; MICROSCOPES; NANOTECHNOLOGY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS;

SEMICONDUCTOR DOPING;

EID: 84855912798     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3672445     Document Type: Article

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