Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2

Nature Nanotechnology

Volumn 9, Issue 2, 2014, Pages 111-115

  Zhang, Yi ^a,b   Chang, Tay Rong ^c   Zhou, Bo ^a,d,e   Cui, Yong Tao ^b,d   Yan, Hao ^b,d   Liu, Zhongkai ^b,d   Schmitt, Felix ^b,d   Lee, James ^b,d   Moore, Rob ^b,d   Chen, Yulin ^a,d,e   Lin, Hsin ^f   Jeng, Horng Tay ^c,g   Mo, Sung Kwan ^a   Hussain, Zahid ^a   Bansil, Arun ^f   Shen, Zhi Xun ^b,d  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

^c NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^d STANFORD UNIVERSITY   (United States)

^e UNIVERSITY OF OXFORD   (United Kingdom)

^f NORTHEASTERN UNIVERSITY   (United States)

^g INSTITUTE OF PHYSICS   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; GRAPHENE; MOLECULAR BEAM EPITAXY; MONOLAYERS; PHOTOELECTRON SPECTROSCOPY; QUANTUM OPTICS; TRANSITION METALS;

ANGLE RESOLVED PHOTOEMISSION SPECTROSCOPY; BANDGAP TRANSITION; CONFINED GEOMETRIES; DIRECT OBSERVATIONS; PHOTOLUMINESCENCE QUANTUM EFFICIENCY; QUANTUM HALL SYSTEMS; TRANSITION METAL DICHALCOGENIDES; VALENCE-BAND MAXIMUMS;

SELENIUM COMPOUNDS;

MOLYBDENUM; SELENIUM; TELLURIUM; TRANSITION ELEMENT;

ARTICLE; CRYSTAL STRUCTURE; ELECTRON; FILM; GEOMETRY; MATERIALS; PHOTOLUMINESCENCE; PHYSICAL PHENOMENA; PRIORITY JOURNAL; QUANTUM MECHANICS; SEMICONDUCTOR; ANGLE RESOLVED PHOTOEMISSION SPECTROSCOPY; QUANTUM CHEMISTRY; SPECTROSCOPY; THICKNESS;

EID: 84893714290     PISSN: 17483387     EISSN: 17483395     Source Type: Journal    
DOI: 10.1038/nnano.2013.277     Document Type: Article

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