Highly scalable, atomically thin WSe2grown via metal-organic chemical vapor deposition

ACS Nano

Volumn 9, Issue 2, 2015, Pages 2080-2087

  Eichfeld, Sarah M ^a   Hossain, Lorraine ^a   Lin, Yu Chuan ^a   Piasecki, Aleksander F ^a   Kupp, Benjamin ^a   Birdwell, A Glen ^d   Burke, Robert A ^d   Lu, Ning ^c   Peng, Xin ^c   Li, Jie ^b   Azcatl, Angelica ^c   McDonnell, Stephen ^c   Wallace, Robert M ^c   Kim, Moon J ^c   Mayer, Theresa S ^a,b   Redwing, Joan M ^a   Robinson, Joshua A ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b The Pennsylvania State University   (United States)

^c The University of Texas at Dallas   (United States)

^d U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

graphene; metal organic chemical vapor deposition (MOCVD); synthesis; transition metal dichalcogenide; tungsten diselenide; two dimensional (2D) materials; WSe2

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTALLOGRAPHY; GRAPHENE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INDUSTRIAL CHEMICALS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MONOLAYERS; NANOCRYSTALLINE MATERIALS; OPTOELECTRONIC DEVICES; ORGANIC CHEMICALS; ORGANOMETALLICS; SYNTHESIS (CHEMICAL); TRANSITION METALS; TUNGSTEN COMPOUNDS; VAN DER WAALS FORCES;

A3. METAL ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); TRANSITION METAL DICHALCOGENIDES; TUNGSTEN DISELENIDE; TWO DIMENSIONAL (2 D); WSE2;

SELENIUM COMPOUNDS;

EID: 84923491178     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn5073286     Document Type: Article

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