Epitaxially grown Si resonant interband tunnel diodes exhibiting high current densities

IEEE Electron Device Letters

Volumn 20, Issue 7, 1999, Pages 329-331

  Rommel, Sean L ^a   Dillon, Thomas E ^a   Berger, Paul R ^a   Thompson, Phillip E ^b   Hobart, Karl D ^b   Lake, Roger ^c   Seabaugh, Alan C ^c  

^a UNIVERSITY OF DELAWARE   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; MOLECULAR BEAM EPITAXY; RAPID THERMAL ANNEALING; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

CMOS COMPATIBILITY; NEGATIVE DIFFERENTIAL RESISTANCE; PEAK TO VALLEY CURRENT RATIO; RESONANT INTERBAND TUNNELING DIODE; TUNNEL BARRIER THICKNESS;

TUNNEL DIODES;

EID: 0033164907     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.772366     Document Type: Article

References (12)

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