Thin film pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunneling diodes integrated onto Si substrates

IEEE Electron Device Letters

Volumn 17, Issue 9, 1996, Pages 443-445

  Evers, N ^b   Vendier, O ^b   Chun, C ^b   Murti, M R ^b   Laskar, J ^a,b   Jokerst, N M ^a,b   Moise, T S ^a,c   Kao, Y C ^a,c  

^a IEEE

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; ELECTRIC CURRENTS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; THIN FILM DEVICES;

PEAK TO VALLEY CURRENT RATIO; RESONANT TUNNELING DIODES; SILICON CIRCUITRY;

TUNNEL DIODES;

EID: 0030243134     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.536287     Document Type: Article

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