Diffusion barrier cladding in Si/SiGe resonant interband tunneling diodes and their patterned growth on PMOS source/drain regions

IEEE Transactions on Electron Devices

Volumn 50, Issue 9, 2003, Pages 1876-1884

  Jin, Niu ^a   Chung, Sung Yong ^a   Rice, Anthony T ^a   Berger, Paul R ^a,b   Thompson, Phillip E ^c   Rivas, Cristian ^d   Lake, Roger ^d   Sudirgo, Stephen ^e   Kempisty, Jeremy J ^e   Curanovic, Branislav ^e   Rommel, Sean L ^e   Hirschman, Karl D ^e   Kurinec, Santosh K ^e   Chi, Peter H ^f   Simons, David S ^f  

^a Ohio State University   (United States)

^b OHIO STATE UNIVERSITY   (United States)

^c NAVAL RESEARCH LABORATORY   (United States)

^d UNIVERSITY OF CALIFORNIA   (United States)

^e ROCHESTER INSTITUTE OF TECHNOLOGY   (United States)

^f NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

CMOS compatibility; Dopant diffusion; Ge Si alloys; Low temperature oxide; Molecular beam epitaxy; Negative differential resistance; Patterned growth; Rapid thermal annealing; Resonant interband tunneling diodes; Silicon

Indexed keywords

CURRENT DENSITY; DIFFUSION IN SOLIDS; INTEGRATED CIRCUIT MANUFACTURE; MOLECULAR BEAM EPITAXY; NEGATIVE RESISTANCE; RAPID THERMAL ANNEALING; RESONANT TUNNELING; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES;

DIFFUSION BARRIER CLADDING; NEGATIVE DIFFERENTIAL RESISTANCE; PEAK-TO-VALLEY CURRENT RATIO; RESONANT INTERBAND TUNNELING DIODES; SELECTIVE AREA MOLECULAR BEAM EPITAXY;

TUNNEL DIODES;

EID: 0041409587     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.815375     Document Type: Article

References (42)

1. L. Esaki, "New phenomenon in narrow Germanium p-n junctions," Phys. Rev., vol. 109, p. 603, 1958.
2. E. Goto, K. Mutara, K. Nakazawa, T. Moto-Oka, Y. Matsuoka, Y. Ishibashi, T. Soma, and E. Wada, "Esaki diode high-speed logical circuits," IRE Trans. Electron. Comput., vol. EC-9, pp. 25-29, 1960.
3. L. L. Chang, L. Esaki, and R. Tsu, "Resonant tunneling in semiconductor double barriers," Appl. Phys. Lett., vol. 24, pp. 593-595, 1974.
4. J. P. A. van der Wagt, A. C. Seabaugh, and E. A. Beam, III, "RTD/HFET low standby power SRAM gain cell," IEEE Electron Dev. Lett., vol. 19, pp. 7-9, Jan. 1998.
5. T. P. E. Broekaert, B. Brar, J. P. A. van der Wagt, A. C. Seabaugh, T. S. Moise, F. J. Morris, E. A. Beam, III, and G. A. Frazier, "A monolithic 4-bit 2-Gsps resonant tunneling analog-to-digital converter," IEEE J. Solid State Circuits, vol. 33, pp. 1342-1349, Sept. 1998.
6. A. Seabaugh, X. Deng, T. Blake, B. Brar, T. Broekaert, R. Lake, F. Morris, and G. Frazier, "Transistors and tunnel diodes for analog/mixed-signal circuits and embedded memory," in Int. Elect. Dev. Meeting Tech. Dig., 1998, pp. 429-432.
7. R. Campaño, L. Molenkamp, and D. J. Paul. (1999) Technology roadmap for nanoelectronics. Eur. Commission IST Programme Future Emerging Technol. [Online], pp. 19-21. Available: ftp://ftp.cordis.lu/pub/esprit/docs/melnarm.pdf
8. "International technology roadmap for semiconductors,", http://public.itrs.net/Files/2001ITRS/Home.htm, p. 41, 2001.
9. K. Ismail, B. S. Meyerson, and P. J. Wang, "Electron resonant tunneling in Si/SiGe double barrier diodes," Appl. Phys. Lett., vol. 59, pp. 973-975, 1991.
10. x resonant tunneling diodes," IEEE Electron. Dev. Lett., vol. 22, pp. 182-184, Apr. 2001.
11. 2/single-crystalline-Si double barrier structure," Elect. Lett., vol. 37, pp. 1200-1201, 2001.
12. 2," Compound Semi., vol. 1997, pp. 617-620, 1998.
13. 3/Si multiple heterostructures," Jpn. J. Appl. Phys., pt. 1, vol. 41, pp. 2602-2605, 2002.
14. 2 resonant tunnel diodes," Superlattices Microstructures, vol. 30, pp. 201-204, 2001.
15. 2 double-barrier resonant tunneling diode with high room-temperature peak-to-valley ratio," Jpn. J. Appl. Phys., pt. 2, vol. 39, pp. L716-L719, 2000.
16. 2 resonant tunneling diode structures grown on Si(111) 1 degrees-off substrate," Jpn. J. Appl. Phys., pt. 2, vol. 39, pp. L964-L967, 2000.
17. V. M. Franks, K. F. Hulme, and J. R. Morgan, "An alloy process for making high current density Si tunnel diode junctions," Solid-State Electron., vol. 8, pp. 343-344, 1965. N. Holonyak, Jr. (private communication).
18. Germanium Power Devices Corp., Andover, MA, 1996.
19. J. Wang, D. Wheeler, Y. Yan, J. Zhao, S. Howard, and A. Seabaugh, "Si tunnel diodes formed by proximity rapid thermal diffusion," in IEEE Lester Eastman Conf. High-Performance Devices, Newark, DE, 2002.
20. A. Seabaugh and R. Lake, "Tunnel diodes," Encyl. Appl. Phys., vol. 22, pp. 335-359, 1998.
21. H. Jorke, H. Kibbel, K. Strohm, and E. Kasper, "Forward-bias characteristics of Si bipolar junctions grown by molecular-beam epitaxy at low-temperatures," Appl. Phys. Lett., vol. 63, pp. 2408-2410, 1993.
22. M. Sweeny and J. Xu, "Resonant interband tunnel diodes," Appl. Phys. Lett., vol. 54, pp. 546-548, 1989.
23. X. Zhu, X. Zheng, M. Pak, M. O. Tanner, and K. L. Wang, "A Si bistable diode utilizing interband tunneling junctions," Appl. Phys. Lett., vol. 71, pp. 2190-2192, 1997.
24. K. D. Hobart, D. J. Godbey, M. E. Twigg, M. Fatemi, P. E. Thompson, and D. S. Simons, "Surface segregation and structure of Sb-doped Si(100) films grown at low temperature by molecular beam epitaxy," Surf. Sci., vol. 334, pp. 29-38, 1995.
25. epi for epitaxial-growth and room-temperature Si growth on Si (100)," Phys. Rev. Lett., vol. 65, pp. 1227-1230, 1990.
26. H. J. Gossmann, F. C. Unterwald, and H. S. Luftman, "Doping of Si thin-films by low-temperature molecular beam epitaxy," J. Appl. Phys., vol. 73, pp. 8237-8241, 1993.
27. 0.5/Si resonant interband tunneling diodes," Appl. Phys. Lett., vol. 73, pp. 2191-2193, 1998.
28. S. L. Rommel, T. E. Dillon, P. R. Berger, R. Lake, P. E. Thompson, K. D. Hobart, A. C. Seabaugh, and D. S. Simons, "Si-Based interband tunneling devices for high-speed logic and low power memory applications," in Late News Int. Elect. Dev. Meet. Tech. Dig., 1998, pp. 1035-1037.
29. S. L. Rommel, T. E. Dillon, P. R. Berger, P. E. Thompson, K. D. Hobart, R. Lake, and A. C. Seabaugh, "Epitaxially grown Si resonant interband tunnel diodes exhibiting high current densities," IEEE Electron Dev. Lett., vol. 20, pp. 329-331, July 1999.
30. P. E. Thompson, K. D. Hobart, M. Twigg, G. Jernigan, T. E. Dillon, S. L. Rommel, P. R. Berger, D. S. Simons, P. H. Chi, R. Lake, and A. C. Seabaugh, "Si resonant interband tunnel diodes grown by low temperature molecular beam epitaxy," Appl. Phys. Lett., vol. 75, pp. 1308-1310, 1999.
31. P. E. Thompson, K. D. Hobart, M. E. Twigg, S. L. Rommel, N. Jin, P. R. Berger, R. Lake, A. C. Seabaugh, P. H. Chi, and D. S. Simons, "Epitaxial Si-based tunnel diodes," Thin Solid Films, vol. 380, pp. 145-150, 2000.
32. K. D. Hobart, P. E. Thompson, S. L. Rommel, T. E. Dillon, and P. R. Berger, "A P-on-N Si interband tunnel diode grown by molecular beam epitaxy," J. Vac. Sci. Technol. B, vol. 19, pp. 290-293, 2001.
33. N. Jin, P. R. Berger, S. L. Rommel, P. E. Thompson, and K. D. Hobart, "A PNP Si resonant interband tunnel diode with symmetrical NDR," Elect. Lett., vol. 37, pp. 1412-1414, 2001.
34. R. Duschl, O. G. Schmidt, E. Kasper, and K. Eberl, "High room temperature peak-to-valley current ratio in Si-based Esaki diodes," Elect. Lett., vol. 35, pp. 1111-1112, 1999.
35. R. Duschl and K. Eberl, "Physics and applications of Si/SiGe/Si resonant interband tunneling diodes," Thin Solid Films, vol. 380, pp. 151-153, 2000.
36. M. W. Dashiell, R. T. Troeger, S. L. Rommel, T. N. Adam, P. R. Berger, J. Kolodzey, A. C. Seabaugh, and R. Lake, "Current voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing," IEEE Trans. Electron Dev., vol. 47, pp. 1707-1714, Sept. 2000.
37. x," Appl. Phys. Lett., vol. 66, pp. 580-582, 1995.
38. J. E. Bergman, J. Chang, Y. Joo, B. Matinpour, J. Laskar, N. M. Jokerst, M. A. Brooke, B. Brar, and E. Beam, "RTD/CMOS nanoelectronic circuits: Thin-film InP-based resonant tunneling diodes integrated with CMOS circuits," IEEE Electron Dev. Lett., vol. 20, pp. 119-122, Mar. 1999.
39. T. Terayama, H. Sekine, and K. Tsutsui, "Fluoride resonant tunneling diodes co-integrated with Si-MOSFETs," Jpn. J. Appl. Phys., pt. 1, vol. 41, pp. 2598-2601.
40. ATHENA Process Simulation Software. Santa Clara, CA: Silvaco Int.
41. D. Biswas, P. R. Berger, and P. K. Bhattacharya, "Recombination velocity at molecular beam epitaxial GaAs regrown interfaces," J. Appl. Phys., vol. 65, pp. 2571-2573, 1989.
42. D. Biswas, P. R. Berger, U. Das, J. E. Oh, and P. K. Bhattacharya, "Investigation of the interface region produced by molecular beam epitaxial regrowth," J. Elect. Mater., vol. 18, pp. 137-142, 1989.