High performance Si/Si 1-x Ge x resonant tunneling diodes

IEEE Electron Device Letters

Volumn 22, Issue 4, 2001, Pages 182-184

  See, P ^a,b   Paul, D J ^a,b   Hollander B ^a,c   Mantl, S ^a,c   Zozoulenko, I V ^a,d   Berggren, K F ^a,d  

^a IEEE   (United Kingdom)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

^d LINKÖPING UNIVERSITY   (Sweden)

Author keywords

Germanium; Resonant tunneling diodes; Silicon; Strain

Indexed keywords

RESONANT TUNNELING DIODES (RTD);

CHEMICAL VAPOR DEPOSITION; ELECTRIC CURRENTS; FIELD EFFECT TRANSISTORS; GERMANIUM; HETEROJUNCTIONS; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM WELLS; TUNNEL DIODES; ULTRAHIGH VACUUM; VOLTAGE MEASUREMENT;

RESONANT TUNNELING;

EID: 0035307596     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.915607     Document Type: Article

References (11)

1. Resonant tunneling in semiconductor double barriers
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6. Epitaxially grown Si/SiGe interband tunneling diodes with high room-temperature peak-to-valley ratio
7. Current-voltage characteristics of high current density silicon Easki diodes grown by molecular beam epitaxy and the influence of thermal annealing
8. y substrates
9. Electrical properties of two-dimensional electron gases grown on cleaned SiGe virtual substrates
10. Modulationdoped n-type Si/SiGe inverted interface
11. Si/SiGe electron resonant tunneling diodes with graded spacer wells