Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor

Nature Materials

Volumn 13, Issue 12, 2014, Pages 1091-1095

  Ugeda, Miguel M ^a   Bradley, Aaron J ^a   Shi, Su Fei ^a   Da Jornada, Felipe H ^a,b   Zhang, Yi ^b,c   Qiu, Diana Y ^a,b   Ruan, Wei ^a,d   Mo, Sung Kwan ^b   Hussain, Zahid ^b   Shen, Zhi Xun ^c,e   Wang, Feng ^a,b   Louie, Steven G ^a,b   Crommie, Michael F ^a,b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

^d TSINGHUA UNIVERSITY   (China)

^e STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; ELECTRON-ELECTRON INTERACTIONS; ENERGY GAP; EXCITONS; MONOLAYERS; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE SPECTROSCOPY; SEMICONDUCTOR QUANTUM WELLS; TRANSITION METALS;

BAND GAP RENORMALIZATION; BETHE-SALPETER EQUATION; ELECTRON CORRELATION EFFECT; EXCITON TRANSITION ENERGY; EXCITON-BINDING ENERGY; SCANNING TUNNELLING SPECTROSCOPY; SEMICONDUCTOR PHYSICS; TRANSITION METAL DICHALCOGENIDES;

BINDING ENERGY;

EID: 85027940328     PISSN: 14761122     EISSN: 14764660     Source Type: Journal    
DOI: 10.1038/nmat4061     Document Type: Article

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