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Volumn 18, Issue 2, 2014, Pages 53-61

An amorphous oxide semiconductor thin-film transistor route to oxide electronics

Author keywords

Active matrix liquid crystal display (AMLCD); Active matrix organic light emitting diode (AMOLED); Amorphous oxide semiconductor (AOS); Flat panel displays; Indium gallium zinc oxide (IGZO); Oxide electronics; Thin film transistor (TFT)

Indexed keywords

AMORPHOUS FILMS; DISPLAY DEVICES; ELECTROPHORETIC DISPLAYS; FIELD EFFECT TRANSISTORS; FLAT PANEL DISPLAYS; INDIUM; LIGHT EMITTING DIODES; LIQUID CRYSTAL DISPLAYS; ORGANIC LIGHT EMITTING DIODES (OLED); OXIDE SEMICONDUCTORS; SEMICONDUCTING INDIUM; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTOR DIODES; THIN FILM CIRCUITS; THIN FILMS; TRANSISTORS; ZINC; ZINC OXIDE;

EID: 84902794197     PISSN: 13590286     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cossms.2013.07.002     Document Type: Review
Times cited : (159)

References (50)
  • 1
    • 0030206894 scopus 로고    scopus 로고
    • Novel oxide amorphous semiconductors: Transparent conducting amorphous oxides
    • Hosono H, Yasukawa M, Kawazoe H. Novel oxide amorphous semiconductors: transparent conducting amorphous oxides. J Non-Cryst Solids 1996;203: 334-44.
    • (1996) J Non-Cryst Solids , vol.203 , pp. 334-344
    • Hosono, H.1    Yasukawa, M.2    Kawazoe, H.3
  • 2
    • 0342441690 scopus 로고
    • Oxford: Oxford University Press
    • Cox PA. The elements. Oxford: Oxford University Press; 1989.
    • (1989) The Elements
    • Cox, P.A.1
  • 3
    • 85030413910 scopus 로고    scopus 로고
    • USGS Mineral Resources Program
    • USGS mineral resources program. .
  • 10
    • 85030407791 scopus 로고    scopus 로고
    • Atomic solid state energy scale: Expanding the data base, multivalence, and doping trends
    • [in preparation]
    • Pelatt BD, Kokenyesi RS, Ravichandran R, Wager JF, Keszler DA. Atomic solid state energy scale: expanding the data base, multivalence, and doping trends. J Am Chem Soc 2013 [in preparation].
    • (2013) J Am Chem Soc
    • Pelatt, B.D.1    Kokenyesi, R.S.2    Ravichandran, R.3    Wager, J.F.4    Keszler, D.A.5
  • 11
    • 53649092548 scopus 로고    scopus 로고
    • Transparent al-zn-sn-o thin film transistors prepared at low temperature
    • Cho D-H, Yang S, Byun C, Shin J, Ryu MK, Park S-HK, et al. Transparent Al-Zn- Sn-O thin film transistors prepared at low temperature. Appl Phys Lett 2008;93: 142111-1-1-3.
    • (2008) Appl Phys Lett , vol.93 , pp. 142111-142113
    • Cho, D.-H.1    Yang, S.2    Byun, C.3    Shin, J.4    Ryu, M.K.5    Park, S.-H.K.6
  • 12
    • 73449096392 scopus 로고    scopus 로고
    • Amorphous hafniumindium- zinc oxide semiconductor thin film transistors
    • Kim C-J, Kim S, Lee J-H, Park J-S, Kim S, Park J, et al. Amorphous hafniumindium- zinc oxide semiconductor thin film transistors. Appl Phys Lett 2009;95: 252103-1-3-3.
    • (2009) Appl Phys Lett , vol.95 , pp. 2521-03133
    • Kim, C.-J.1    Kim, S.2    Lee, J.-H.3    Park, J.-S.4    Kim, S.5    Park, J.6
  • 13
    • 79955151187 scopus 로고    scopus 로고
    • Investigations of lightinduced bias instability in hf-in-zn-o thin film transistors: A cation combinatorial approach
    • Kwon J-Y, Jung JS, Son KS, Lee K-H, Park JS, Kim TS, et al. Investigations of lightinduced bias instability in Hf-In-Zn-O thin film transistors: a cation combinatorial approach. J Electrochem Soc 2011;158: H433-7.
    • (2011) J Electrochem Soc , vol.158
    • Kwon, J.-Y.1    Jung, J.S.2    Son, K.S.3    Lee, K.-H.4    Park, J.S.5    Kim, T.S.6
  • 14
    • 78149382528 scopus 로고    scopus 로고
    • Present status of in-ga-zn-o thin-film transistors
    • Kamiya T, Nomura K, Hosono H. Present status of In-Ga-Zn-O thin-film transistors. Sci Technol Adv Mater 2010;11: 1-23.
    • (2010) Sci Technol Adv Mater , vol.11 , pp. 1-23
    • Kamiya, T.1    Nomura, K.2    Hosono, H.3
  • 15
    • 79551552419 scopus 로고    scopus 로고
    • Instabilities in amorphous oxide semiconductor thin-film transistors
    • Conley JF. Instabilities in amorphous oxide semiconductor thin-film transistors. IEEE Trans Dev Mater Reliab 2010;10: 460-75.
    • (2010) IEEE Trans Dev Mater Reliab , vol.10 , pp. 460-475
    • Conley, J.F.1
  • 16
    • 79951993680 scopus 로고    scopus 로고
    • The status and perspectives of metal oxide thin-film transistors for active matrix flexible displays
    • Jeong JK. The status and perspectives of metal oxide thin-film transistors for active matrix flexible displays. Semicond Sci Technol 2011;26: 034008- 1-034008-10.
    • (2011) Semicond Sci Technol , vol.26 , pp. 0340081-03400810
    • Jeong, J.K.1
  • 17
    • 84855965812 scopus 로고    scopus 로고
    • Review of recent developments in amorphous oxide semiconductor thin-film transistor devices
    • Park JS, Maeng W-J, Kim H-S, Park J-S. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices. Thin Solid Films 2012;520: 1679-93.
    • (2012) Thin Solid Films , vol.520 , pp. 1679-1693
    • Park, J.S.1    Maeng, W.-J.2    Kim, H.-S.3    Park, J.-S.4
  • 23
    • 71949092733 scopus 로고    scopus 로고
    • The effect of moisture on the photon-enhanced negative bias thermal instability in ga-in-zn-o thin film transistors
    • Lee K-H, Jung JS, Son KS, Park JS, Kim TS, Choi R, et al. The effect of moisture on the photon-enhanced negative bias thermal instability in Ga-In-Zn-O thin film transistors. Appl Phys Lett 2009;95: 032106-1-6-3.
    • (2009) Appl Phys Lett , vol.95 , pp. 032106-032163
    • Lee, K.-H.1    Jung, J.S.2    Son, K.S.3    Park, J.S.4    Kim, T.S.5    Choi, R.6
  • 25
    • 77955160907 scopus 로고    scopus 로고
    • O-vacancy as the origin of negative bias illumination stress instability in amorphous in-ga- zn-o thin film transistors
    • Ryu B, Noh H-K, Choi E-A, Chang KJ. O-vacancy as the origin of negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors. Appl Phys Lett 2010;97: 022108-1-8-3.
    • (2010) Appl Phys Lett , vol.97 , pp. 022108-022183
    • Ryu, B.1    Noh, H.-K.2    Choi, E.-A.3    Chang, K.J.4
  • 26
    • 78149458396 scopus 로고    scopus 로고
    • Light induced instabilities in amorphous indium-gallium-zinc-oxide thin-film transistors
    • Chowdhury MDH, Migliorato P, Jang J. Light induced instabilities in amorphous indium-gallium-zinc-oxide thin-film transistors. Appl Phys Lett 2010;97: 173506-1-6-3.
    • (2010) Appl Phys Lett , vol.97 , pp. 1735061-1736063
    • Chowdhury, M.D.H.1    Migliorato, P.2    Jang, J.3
  • 27
    • 77951149451 scopus 로고    scopus 로고
    • The impact of device configuration on the photon-enhanced negative bias thermal instability of gainzno thin film transistors
    • Kwon J-Y, Son KS, Jung JS, Lee K-H, Park JS, Kim TS, et al. The impact of device configuration on the photon-enhanced negative bias thermal instability of GaInZnO thin film transistors. Electrochem Solid State Lett 2010;13: H213-5.
    • (2010) Electrochem Solid State Lett , vol.13
    • Kwon, J.-Y.1    Son, K.S.2    Jung, J.S.3    Lee, K.-H.4    Park, J.S.5    Kim, T.S.6
  • 28
    • 78649300313 scopus 로고    scopus 로고
    • Photon-accelerated negative bias instability involving subgap states creation in amorphous in- ga-zn-o thin film transistor
    • Oh H, Yoon S-M, Ryu MK, Hwang C-S, Yang S, Park S-HK. Photon-accelerated negative bias instability involving subgap states creation in amorphous In- Ga-Zn-O thin film transistor. Appl Phys Lett 2010;97: 183502-1-2-3.
    • (2010) Appl Phys Lett , vol.97 , pp. 1835021-1835023
    • Oh, H.1    Yoon, S.-M.2    Ryu, M.K.3    Hwang, C.-S.4    Yang, S.5    Park, S.-H.K.6
  • 29
    • 78649291990 scopus 로고    scopus 로고
    • The impact of gate dielectric materials on the light-induced bias instability in hf-in-zn-o thin film transistor
    • Kwon J-Y, Jung JS, Son KS, Lee K-H, Park JS, Kim TS, et al. The impact of gate dielectric materials on the light-induced bias instability in Hf-In-Zn-O thin film transistor. Appl Phys Lett 2010;97: 183503-1-3-3.
    • (2010) Appl Phys Lett , vol.97 , pp. 1835031-1835033
    • Kwon, J.-Y.1    Jung, J.S.2    Son, K.S.3    Lee, K.-H.4    Park, J.S.5    Kim, T.S.6
  • 32
    • 79958064116 scopus 로고    scopus 로고
    • Comprehensive studies of the degradation mechanism in amorphous ingazno transistors by the negative bias illumination stress
    • Ji KH, Kim J-I, Jung HY, Park SY, Choi R, Mo YG, et al. Comprehensive studies of the degradation mechanism in amorphous InGaZnO transistors by the negative bias illumination stress. Microelectron Eng 2011;88: 1412-6.
    • (2011) Microelectron Eng , vol.88 , pp. 1412-1416
    • Ji, K.H.1    Kim, J.-I.2    Jung, H.Y.3    Park, S.Y.4    Choi, R.5    Mo, Y.G.6
  • 33
    • 79952687049 scopus 로고    scopus 로고
    • Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of ingazno thin film transistors
    • Ji KH, Kim J-I, Jung HY, Park SY, Choi R, Kim UK, et al. Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors. Appl Phys Lett 2011;98: 103509-1-9-3.
    • (2011) Appl Phys Lett , vol.98 , pp. 1035091-1035093
    • Ji, K.H.1    Kim, J.-I.2    Jung, H.Y.3    Park, S.Y.4    Choi, R.5    Kim, U.K.6
  • 34
    • 80051578933 scopus 로고    scopus 로고
    • Highly stable amorphous in-ga-zn-o thinfilm transistors produced by eliminating deep subgap defects
    • Nomura K, Kamiya T, Hosono H. Highly stable amorphous In-Ga-Zn-O thinfilm transistors produced by eliminating deep subgap defects. Appl Phys Lett 2011;99: 053505-1-5-3.
    • (2011) Appl Phys Lett , vol.99 , pp. 0535051-0535053
    • Nomura, K.1    Kamiya, T.2    Hosono, H.3
  • 35
    • 84858332555 scopus 로고    scopus 로고
    • Stability and high-frequency operation of amorphous in-ga-zn-o thin-film transistors with various passivation layers
    • Nomura K, Kamiya T, Hosono H. Stability and high-frequency operation of amorphous In-Ga-Zn-O thin-film transistors with various passivation layers. Thin Solid Films 2012;520: 3778-82.
    • (2012) Thin Solid Films , vol.520 , pp. 3778-3782
    • Nomura, K.1    Kamiya, T.2    Hosono, H.3
  • 37
  • 38
    • 84859408013 scopus 로고    scopus 로고
    • Oxide-tft technologies for next-generation amoled displays
    • Arai T. Oxide-TFT technologies for next-generation AMOLED displays. J SID 2012;20: 156-61.
    • (2012) J SID , vol.20 , pp. 156-161
    • Arai, T.1
  • 39
    • 84858674545 scopus 로고    scopus 로고
    • Novel self-aligned topgate oxide tft for amoled displays
    • Morosawa N, Ohshima Y, Morooka M, Arai T, Sasaoka T. Novel self-aligned topgate oxide TFT for AMOLED displays. J SID 2012;20: 47-52.
    • (2012) J SID , vol.20 , pp. 47-52
    • Morosawa, N.1    Ohshima, Y.2    Morooka, M.3    Arai, T.4    Sasaoka, T.5
  • 40
  • 43
    • 80052029762 scopus 로고    scopus 로고
    • Extraction of subgap donor states in a-igzo tfts by generation- recombination current spectroscopy
    • Bae M, Kim Y, Kim S, Kim DM, Kim DH. Extraction of subgap donor states in a-IGZO TFTs by generation-recombination current spectroscopy. IEEE Trans Electron Dev 2011;32: 1248-50.
    • (2011) IEEE Trans Electron Dev , vol.32 , pp. 1248-1250
    • Bae, M.1    Kim, Y.2    Kim, S.3    Kim, D.M.4    Kim, D.H.5
  • 44
    • 84902797986 scopus 로고    scopus 로고
    • 2nd Ed. Berlin: Springer; New York: Wiley, 621-3
    • Böer KW. Survey of semiconductor physics. 2nd ed. berlin: springer; pp. New York: Wiley; 2002. vol. II, p. 615-6, 621-3.
    • (2002) Survey Of Semiconductor Physics , vol.2 , pp. 615-616
    • Böer, K.W.1
  • 45
    • 70350726087 scopus 로고    scopus 로고
    • Twodimensional numerical simulation of radio frequency sputter amorphous in- ga-zn-o thin-film transistors
    • Fung T-C, Chuang C-S, Chen C, Abe K, Cottle R, Townsend M, et al. Twodimensional numerical simulation of radio frequency sputter amorphous In- Ga-Zn-O thin-film transistors. J Appl Phys 2009;106: 084511-1-084511-10.
    • (2009) J Appl Phys , vol.106 , pp. 0845111-08451110
    • Fung, T.-C.1    Chuang, C.-S.2    Chen, C.3    Abe, K.4    Cottle, R.5    Townsend, M.6
  • 49
    • 77649184578 scopus 로고    scopus 로고
    • Extraction of subgap density of states in amorphous ingazno thin-film transistors by using multifrequency capacitance-voltage characteristics
    • Lee S, Park S, Kim S, Jeon Y, Jeon K, Park J-H, et al. Extraction of subgap density of states in amorphous InGaZnO thin-film transistors by using multifrequency capacitance-voltage characteristics. IEEE Electron Dev Lett 2010;31: 231-3.
    • (2010) IEEE Electron Dev Lett , vol.31 , pp. 231-233
    • Lee, S.1    Park, S.2    Kim, S.3    Jeon, Y.4    Jeon, K.5    Park, J.-H.6
  • 50
    • 0038345965 scopus 로고    scopus 로고
    • Electronic structure and energy offsets for ultrathin silicon nitride on si(100
    • Miyazaki S, Narasaki M, Suyama A, Yamaoka M, Murakami H. Electronic structure and energy offsets for ultrathin silicon nitride on Si(100). Appl Surf Sci 2003;216: 252-7.
    • (2003) Appl Surf Sci , vol.216 , pp. 252-257
    • Miyazaki, S.1    Narasaki, M.2    Suyama, A.3    Yamaoka, M.4    Murakami, H.5


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