SCOPUS 정보 검색 플랫폼

Volumn 12, Issue 1, 2008, Pages

Threshold voltage control of Amorphous gallium indium zinc oxide TFTs by suppressing back-channel current

(10) Son, Kyoung Seok a Kim, Tae Sang a Jung, Ji Sim a Ryu, Myung Kwan a Park, Kyung Bae a Yoo, Byung Wook a Park, Keechan c Kwon, Jang Yeon a Lee, Sang Yoon a Kim, Jong Min b

a Display Laboratory (South Korea)

b Konkuk University (South Korea)

c Samsung Advanced Institute of Technology (SAIT) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; GALLIUM; HIGH ELECTRON MOBILITY TRANSISTORS; OXIDES; OXYGEN; OZONE WATER TREATMENT; PASSIVATION; PLASMA APPLICATIONS; PLASMAS; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILICON COMPOUNDS; THICK FILMS; THIN FILM DEVICES; THRESHOLD VOLTAGE; TRANSISTORS; VOLTAGE REGULATORS; ZINC; ZINC OXIDE;

ACTIVE LAYERS; CHANNEL CURRENTS; ENHANCEMENT MODES; GALLIUM INDIUM ZINC OXIDES; PLASMA TREATMENTS; SILICON OXIDES; THRESHOLD VOLTAGE CONTROLS;

THIN FILM TRANSISTORS;

EID: 56049127394 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3020766 Document Type: Article

Times cited : (69)

References (9)

1
- 9744248669
- K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature (London), 432, 488 (2004).
- (2004) Nature (London) , vol.432 , pp. 488
- Nomura, K.¹ Ohta, H.² Takagi, A.³ Kamiya, T.⁴ Hirano, M.⁵ Hosono, H.⁶

2
- 33744460748
- K. Nomura, A. Takagi, H. Ohta, M. Hirano, and H. Hosono, Jpn. J. Appl. Phys., Part 1, 45, 4303 (2006).
- (2006) Jpn. J. Appl. Phys., Part 1 , vol.45 , pp. 4303
- Nomura, K.¹ Takagi, A.² Ohta, H.³ Hirano, M.⁴ Hosono, H.⁵

3
- 33744780986
- P. Barquinha, A. Pimentel, A. Marques, L. Pereira, R. Martins, and E. Fortunato, J. Non-Cryst. Solids, 352, 1749 (2006).
- (2006) J. Non-Cryst. Solids , vol.352 , pp. 1749
- Barquinha, P.¹ Pimentel, A.² Marques, A.³ Pereira, L.⁴ Martins, R.⁵ Fortunato, E.⁶

4
- 20644459026
- N. L. Dehuff, E. S. Kettenring, D. Hong, H. Q. Chiang, J. F. Wager, R. L. Hoffman, C. H. Park, and D. A. Keszler, J. Appl. Phys., 97, 064505 (2005).
- (2005) J. Appl. Phys. , vol.97 , pp. 064505
- Dehuff, N.L.¹ Kettenring, E.S.² Hong, D.³ Chiang, H.Q.⁴ Wager, J.F.⁵ Hoffman, R.L.⁶ Park, C.H.⁷ Keszler, D.A.⁸

5
- 33745435681
- H. Hosono, J. Non-Cryst. Solids, 352, 851 (2006).
- (2006) J. Non-Cryst. Solids , vol.352 , pp. 851
- Hosono, H.¹

6
- 29044441257
- D. Hong and J. F. Wager, J. Vac. Sci. Technol. B, 23, L25 (2005).
- (2005) J. Vac. Sci. Technol. B , vol.23 , pp. 25
- Hong, D.¹ Wager, J.F.²

7
- 34248399209
- D. Kang, H. Lim, C. Kim, I. Song, J. Park, Y. Park, and J. Park, Appl. Phys. Lett., 90, 192101 (2007).
- (2007) Appl. Phys. Lett. , vol.90 , pp. 192101
- Kang, D.¹ Lim, H.² Kim, C.³ Song, I.⁴ Park, J.⁵ Park, Y.⁶ Park, J.⁷

8
- 34547365696
- J. S. Park, J. K. Jeong, Y. G. Mo, H. D. Kim, and S. I. Kim, Appl. Phys. Lett., 90, 262106 (2007).
- (2007) Appl. Phys. Lett. , vol.90 , pp. 262106
- Park, J.S.¹ Jeong, J.K.² Mo, Y.G.³ Kim, H.D.⁴ Kim, S.I.⁵

9
- 0036070060
- K. S. Son, D. L. Choi, H. N. Lee, and W. G. Lee, Curr. Appl. Phys., 2, 229 (2002).
- (2002) Curr. Appl. Phys. , vol.2 , pp. 229
- Son, K.S.¹ Choi, D.L.² Lee, H.N.³ Lee, W.G.⁴

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