A framework for assessing amorphous oxide semiconductor thin-film transistor passivation

Journal of the Society for Information Display

Volumn 20, Issue 10, 2012, Pages 589-595

  Wager, John F ^a   Hoshino, Ken ^a   Sundholm, Eric S ^a   Presley, Rick E ^a   Ravichandran, Ram ^a   Knutson, Christopher C ^a   Keszler, Douglas A ^a   Hoffman, Randy L ^b   Mourey, Devin A ^b   Robertson, John ^c  

^a OREGON STATE UNIVERSITY   (United States)

^b HEWLETT PACKARD COMPANY   (United States)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Amorphous oxide semiconductors; Interface states; Oxide electronics; Passivation; Thin film transistors

Indexed keywords

ACCUMULATION LAYERS; AMORPHOUS OXIDE SEMICONDUCTOR (AOS); CHANNEL LAYERS; CHARGE NEUTRALITY LEVEL; CONCEPTUAL MODEL; DISPLAY APPLICATION; ELECTRONIC TRANSFERS; ENERGY-BAND DIAGRAM; INDIUM GALLIUM ZINC OXIDES; OXIDE ELECTRONICS; PASSIVATION LAYER; RELATIVE POSITIONS; THIN-FILM TRANSISTOR (TFTS); ZINC TIN OXIDE;

INTERFACE STATES; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM TRANSISTORS; TIN; TIN OXIDES;

PASSIVATION;

EID: 84872349581     PISSN: 10710922     EISSN: 19383657     Source Type: Journal    
DOI: 10.1002/jsid.120     Document Type: Article

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