Extraction of subgap donor states in a-IGZO TFTs by generation- recombination current spectroscopy

IEEE Electron Device Letters

Volumn 32, Issue 9, 2011, Pages 1248-1250

  Bae, Minkyung ^a   Kim, Yongsik ^a   Kim, Sungchul ^a   Kim, Dong Myong ^a   Kim, Dae Hwan ^a  

^a Kookmin University   (South Korea)

Author keywords

Amorphous InGaZnO (a IGZO); generation recombination (G R) current; subgap donorlike density of states (DOS); thin film transistor (TFT)

Indexed keywords

DENSITY OF STATE; DONOR STATE; GENERATION- RECOMBINATION (G-R) CURRENT; GENERATION-RECOMBINATION; PHYSICS-BASED; RECOMBINATION CURRENTS; SHOCKLEY-READ-HALL RECOMBINATIONS; SUBGAP DONORLIKE DENSITY OF STATES (DOS);

AMORPHOUS FILMS; CARRIER CONCENTRATION; SEMICONDUCTING ORGANIC COMPOUNDS;

THIN FILM TRANSISTORS;

EID: 80052029762     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2160835     Document Type: Article

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