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Volumn 158, Issue 4, 2011, Pages

Investigation of light-induced bias instability in Hf-In-Zn-O thin film transistors: A cation combinatorial approach

(11) Kwon, Jang Yeon a Jung, Ji Sim a Son, Kyoung Seok a Lee, Kwang Hee a Park, Joon Seok a Kim, Tae Sang a Park, Jin Seong b Choi, Rino c Jeong, Jae Kyeong c Koo, Bonwon a Lee, Sangyun a

a Samsung Advanced Institute of Technology (SAIT) (South Korea)

b Dankook University (South Korea)

c Inha University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BANDGAP MODULATION; BIAS INSTABILITY; BIAS THERMAL STRESS; COMBINATORIAL APPROACH; HOLE CARRIERS; IN-DEPTH STUDY; INJECTION MODEL; MULTI-COMPONENT OXIDES; NEGATIVE BIAS; OXYGEN VACANCY CONCENTRATION; PHOTO-STABILITY; VACUUM DEPOSITION TECHNIQUES;

HAFNIUM; OXYGEN; OXYGEN VACANCIES; THERMAL STRESS; THERMOELASTICITY; THIN FILM TRANSISTORS;

ZINC;

EID: 79955151187 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3552700 Document Type: Article

Times cited : (22)

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