Extraction of subgap density of states in amorphous ingazno thin-film transistors by using multifrequency capacitancevoltage characteristics

IEEE Electron Device Letters

Volumn 31, Issue 3, 2010, Pages 231-233

  Lee, Sangwon ^a   Park, Sungwook ^a   Kim, Sungchul ^a   Jeon, Yongwoo ^a   Jeon, Kichan ^a   Park, Jun Hyun ^a   Park, Jaechul ^a   Song, Ihun ^a   Kim, Chang Jung ^a   Park, Youngsoo ^a   Kim, Dong Myong ^a   Kim, Dae Hwan ^a  

^a Kookmin University   (South Korea)

Author keywords

Amorphous; Density of states (DOS); Indium gallium zinc oxide (InGaZnO); Multifrequency capacitance voltage (C V) characteristics; Technology computer aided design (TCAD); Thin film transistors (TFTs)

Indexed keywords

AMORPHOUS; CAPACITANCE-VOLTAGE CHARACTERISTICS; DENSITY OF STATE; DENSITY OF STATES (DOS); MULTI FREQUENCY; MULTIFREQUENCY CAPACITANCE-VOLTAGE (C-V) CHARACTERISTICS; TECHNOLOGY COMPUTER AIDED DESIGN;

AMORPHOUS FILMS; CAPACITANCE; COMPUTER AIDED DESIGN; COMPUTER SIMULATION; INDIUM; SEMICONDUCTING ORGANIC COMPOUNDS; ZINC;

THIN FILM TRANSISTORS;

EID: 77649184578     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2039634     Document Type: Article

References (6)

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