SCOPUS 정보 검색 플랫폼

Volumn 106, Issue 8, 2009, Pages

Two-dimensional numerical simulation of radio frequency sputter amorphous In-Ga-Zn-O thin-film transistors

(8) Fung, Tze Ching a Chuang, Chiao Shun a,d Chen, Charlene a Abe, Katsumi b Cottle, Robert c Townsend, Mark c Kumomi, Hideya b Kanicki, Jerzy a

a UNIVERSITY OF MICHIGAN (United States)

b CANON INC (Japan)

c Silvaco Data Systems Inc (United States)

d Diodes Inc (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY-OF-STATES; ELECTRICAL PROPERTY; FIELD-EFFECT MOBILITIES; ON/OFF RATIO; RADIO FREQUENCIES; RADIO FREQUENCY SPUTTER; SLOPE DISTRIBUTION; SPECIFIC CONTACT RESISTANCES; SUBTHRESHOLD SWING; TWO-DIMENSIONAL NUMERICAL SIMULATION; TWO-DIMENSIONAL SIMULATIONS;

AMORPHOUS FILMS; ELECTRON MOBILITY; GALLIUM; OXYGEN; OXYGEN VACANCIES; RADIO; RADIO WAVES; SEMICONDUCTING ORGANIC COMPOUNDS; SIMULATORS; THIN FILM DEVICES; THIN FILM TRANSISTORS; TWO DIMENSIONAL; ZINC;

ELECTRIC PROPERTIES;

EID: 70350726087 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3234400 Document Type: Article

Times cited : (234)

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