Highly stable double-gate Ga-In-Zn-O thin-film transistor

IEEE Electron Device Letters

Volumn 31, Issue 8, 2010, Pages 812-814

  Son, Kyoung Seok ^a   Jung, Ji Sim ^a   Lee, Kwang Hee ^a   Kim, Tae Sang ^a   Park, Joon Seok ^a   Park, Keechan ^b   Kwon, Jang Yeon ^a   Koo, Bonwon ^a   Lee, Sang Yoon ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Konkuk University   (South Korea)

Author keywords

Double gate (DG); GaInZnO (GIZO); stability; thin film transistor (TFT); threshold voltage

Indexed keywords

BACKLIGHT ILLUMINATION; BIAS TEMPERATURE STRESS; DOUBLE GATE; ELECTRICAL STABILITY; GAINZNO; GAINZNO (GIZO); TEMPERATURE STRESS; THIN-FILM TRANSISTOR (TFT);

GALERKIN METHODS; GALLIUM; SEMICONDUCTING ORGANIC COMPOUNDS; THRESHOLD VOLTAGE; ZINC;

THIN FILM TRANSISTORS;

EID: 77955172950     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2050294     Document Type: Article

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