Atomic solid state energy scale

Journal of the American Chemical Society

Volumn 133, Issue 42, 2011, Pages 16852-16860

  Pelatt, Brian D ^a   Ravichandran, Ram ^a   Wager, John F ^a   Keszler, Douglas A ^b  

^a Oregon State University   (United States)

^b OREGON STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL HARDNESS; CLOSED SHELLS; ENERGY BANDGAPS; ENERGY REFERENCE; HYDROGEN DONOR; INORGANIC SEMICONDUCTORS; IONICITIES; SIMPLE APPROACH; SOLID STATE ENERGY; STANDARD HYDROGEN ELECTRODES;

CHEMICAL BONDS; ELECTRON AFFINITY; ELECTRONEGATIVITY; HYDROGEN;

IONIZATION POTENTIAL;

ANION; CATION; HYDROGEN;

ARTICLE; ELECTRON; IONIZATION; NUCLEAR ENERGY; PH ELECTRODE; SEMICONDUCTOR; SOLID STATE;

EID: 80054996024     PISSN: 00027863     EISSN: 15205126     Source Type: Journal    
DOI: 10.1021/ja204670s     Document Type: Article

References (69)

1. Bard, A. J.; Parsons, R.; Jordan, J. Standard Potentials in Aqueous Solution; Marcel Dekker: New York, 1985.
2. van de Walle, C. G.; Neugebauer, J. Nature 2003, 423 (6940) 626
3. Trasatti, S. Pure Appl. Chem. 1986, 58.
4. Shriver, D. F.; Atkins, P. W. Inorg. Chem. 3 ed.; W.H. Freeman: New York, 1999.
5. King, P. D. C.; Veal, T. D.; Fuchs, F.; Wang, C. Y.; Payne, D. J.; Bourlange, A.; Zhang, H.; Bell, G. R.; Cimalla, V.; Ambacher, O.; Egdell, R. G.; Bechstedt, F.; McConville, C. F. Phys. Rev. B 2009, 79 (20) 205211
6. Dali, S. E.; Sunder, V. V. S. S.; Jayachandra, M.; Chockalingan, M. J. J. Mat. Sci. 1998, 17, 619
7. Barreau, N.; Marsillac, S.; Bernède, J. C.; Ben Nasrallah, T.; Belgacem, S. Phys. Status Solidi a 2001, 184, 179
8. Ruiz-Fuertes, J.; Errandonea, D.; Manjón, F. J.; Martínez-García, D.; Segura, A.; Ursaki, V. V.; Tiginyanu, I. M. J. Appl. Phys. 2008, 103, 063710
9. Pauling, L. J. Am. Chem. Soc. 1932, 54 (9) 3570
10. Mulliken, R. S. J. Chem. Phys. 1934, 2.
11. Huheey, J.; Keiter, E.; Keiter, R. Inorganic Chemistry.: Principles of Structure and Reactivity. 4 ed.; Prentice Hall: Upper Saddle River, NJ, 1997.
12. Frese, K. W. J. Vac. Sci. Technol. 1979, 16 (4) 1042
13. Ghosh, D. C.; Islam, N. Int. J. Quantum Chem. 2011, 111 (1) 40
14. Bratsch, S. J. Chem. Educ. 1988, 65, 34
15. Pauling, L. The Nature of the Chemical Bond, 3 ed.; Cornell University Press: Ithaca, NY, 1960.
16. Pearson, R. G. Chemical Hardness; Wiley-VCH: Weinheim, Germany, 1997.
17. Pearson, R. G. J. Chem. Sci. 2005, 117, 369
18. Phillips, J. C.; Lucovsky, G. Bonds and Bands in Semiconductors., 2 ed.; Momentum Press: New York, 2010.
19. Harrison, W. Elementary Electronic Structures; World Scientific Publishing: River Edge, 1999.
20. Brillson, L. J. Surfaces and Interfaces of Electronic Matertials; Wiley-VCH: Morlenbach, Germany, 2011.
21. Predel, B.; Madelung, O. Landolt-Bornstein, Electronic Materials and Semiconductors; Springer-Verlag: Berlin, 2010.
22. Adachi, S. Handbook on Physical Properties of Semiconductors, Vols. 1-3. Springer-Verlag: New York, 2004.
23. Al-Kuhaili, M. F. Opt. Mat. 2004, 27, 383
24. Berger, L. Semiconductor Materials. CRC Press: Boca Raton, FL, 1997.
25. Bozack, M. J. Phys. Status Solidi B 1997, 202, 549
26. Breeze, A. J.; Schlesinger, Z.; Carter, S. A.; Brock, P. J. Phys. Rev. B 2001, 64 (12) 125205
27. Cogan, S. F.; Nguyen, N. M.; Perrotti, S. J.; Rauh, R. D. J. Appl. Phys. 1989, 66 (3) 1333
28. Desai, S. R.; Wu, H.; Rohlfing, C. M.; Wang, L.-S. J. Chem. Phys. 1997, 106 (4) 1309
29. Ebinghaus, H. Z. Z. Naturforsch. 1964, 19A, 727
30. Ferro, R.; Rodriguez, J. A. Sol. Energy Mater. Sol. Cells 2000, 64, 363
31. Fitz-Gerald, J. M.; Hoekstra, J.; Rack, P. D.; Fowlkes, J. D. Appl. Phys. Let. 2003, 82 (20) 3466
32. Fonash, S. Solar Cell Device Physics, 2 ed.; Academic Press: New York, 1981.
33. Galtayries, A.; Wisniewski, S.; Grimblot, J. J. Electron Spectrosc. Relat. Phenom. 1997, 87 (1) 31
34. Guo, L. Comput. Mater. Sci. 2008, 42, 489
35. Guo, L.; Wu, H. S. Eur. Phys. J. D 2007, 42, 259
36. Guo, Q.; Yoshida, A. Jpn. J. Appl. Phys. 1994, 33, 2453
37. Haynes, W. M., CRC Handbook of Chemistry and Physics: CRC Press: Boca Raton, FL, 2010; Vol. 91.
38. Jefferson, P. H.; Hatfield, S. A.; Veal, T. D.; King, P. D. C.; McConville, C. F.; Zuniga Perez, J.; Munoz Sanjose, V. Appl. Phys. Lett. 2008, 92 (2) 022101
39. Kaneko, Y.; Koda, T. J. Cryst. Growth 1990, 86 (1-4) 72
40. Klein, A. Appl. Phys. Let. 2000, 77 (13) 2009
41. Knapp, R. A. Phys. Rev. 1963, 132 (5) 1891
42. Lai, B. C.-m.; Lee, J. Y.-m. J. Electrochem. Soc. 1999, 146 (1) 266
43. Lehmann, W. J. Electrochem. Soc. 1970, 117 (11) 1389
44. Levinshtein, M. E.; Shur, M.; Rumyantsev, S., Properties of Advanced Semiconductor Materials: GaN, AlN, InN, BN, SiC, SiGe. Wiley Interscience: Hoboken, NJ, 2001.
45. Li, S. X.; Yu, K. M.; Wu, J.; Jones, R. E.; Walukiewicz, W.; Ager, J. W.; Shan, W.; Haller, E. E.; Lu, H.; Schaff, W. J. Phys. Rev. B 2005, 71 (16) 161201
46. Madelung, O. Semiconductors: Data Handbook. 3 ed.; Springer: New York, 2004.
47. Martin, F. E.; Hensley, E. B. Phys. Rev. 1967, 163 (2) 219
48. Monaghan, S.; Hurley, P. K.; Cherkaoui, K.; Negara, M. A.; Schenk, A. Solid-State Electron. 2009, 53, 438
49. Moormann, H.; Kohl, D.; Heiland, G. Surf. Sci. 1979, 80, 261
50. Peacock, P. W.; Robertson, J. Appl. Phys. Let. 2003, 83 (10) 2025
51. Poole, R. T.; Jenkin, J. G.; Liesegang, J.; Leckey, R. C. G. Phys. Rev. B 1975, 11, 5179
52. Quiniou, B.; Schwarz, W.; Wu, Z.; Osgood, R. M.; Yang, Q.; Phillips, J. M. Appl. Phys. Let. 1992, 60, 183
53. Reynolds, K. J.; Barker, J. A.; Greenham, N. C.; Friend, R. H.; Frey, G. L. J. Appl. Phys. 2002, 92 (12) 7556
54. Robertson, J. J. Vac. Sci. Technol., B 2000, 18, 1785
55. Strehlow, W. H.; Cook, E. L. J. Phys. Chem. Ref. Data 1973, 2, 163
56. Sze, S.; Ng, K. Physics of Semiconductor Devices, 2 ed.; John Wiley and Sons: Hoboken, NJ, 2007.
57. Teisseyre, H.; Perlin, P.; Suski, T.; Grzegory, I.; Porowski, S.; Jun, J.; Pietraszko, A.; Moustakas, T. D. J. Appl. Phys. 1994, 76 (4) 2429
58. Thomas, T.; Guo, X.; Chandrashekhar, M. V. S.; Poitras, C. B.; Shaff, W.; Dreibelbis, M.; Reiherzer, J.; Li, K.; DiSalvo, F. J.; Lipson, M.; Spencer, M. G. J. Cryst. Growth 2009, 311 (19) 4402
59. Tsou, K. Y.; Hensley, E. B. J. Appl. Phys. 1974, 45, 47
60. Wager, J. F.; Keszler, D. A.; Presley, R. E. Transparent Electronics; Springer: New York, 2008.
61. Walter, C. W.; Hertzler, C. F.; Devynck, P.; Smith, G. P.; Peterson, J. R. J. Chem. Phys. 1991, 95 (2) 824
62. Wang, L. S.; Wu, H.; Desai, S. L.; Fan, J.; Colson, S. D. J. Phys. Chem. 1996, 100, 8697
63. Wilk, G. D.; Wallace, R. M.; Anthony, J. M. J. Appl. Phys. 2001, 89 (10) 5243
64. Williams, R. H.; Murray, R. B.; Govan, D. W.; Thomast, J. M.; Evans, E. L. J. Phys. C: Solid State Phys. 1973, 6, 3631
65. Zhai, H.-J.; Wang, L.-S. J. Chem. Phys. 2002, 117 (17) 7882
66. Moore, C. E. National Standard Reference Data Series; National Bureau of Standards: Washington, DC, 1970; Vol. 34.
67. Hotop, H.; Lineberger, W. C. J. Phys. Chem. Ref. Data 1985, 68, 731
68. Pearson, R. Inorg. Chem. 1988, 27, 734
69. Phillips, J. C. Rev. Mod. Phys. 1970, 42, 317