AC/DC rectification with indium gallium oxide thin-film transistors

IEEE Electron Device Letters

Volumn 31, Issue 4, 2010, Pages 314-316

  McFarlane, Brian R ^a   Kurahashi, Peter ^a   Heineck, Daniel P ^a   Presley, Rick E ^a   Sundholm, Eric ^a   Wager, John F ^a  

^a Oregon State University   (United States)

Author keywords

Amorphous semiconductors; Rectifiers; Thin film transistors (TFTs)

Indexed keywords

AMORPHOUS OXIDE SEMICONDUCTORS; CHANNEL LAYERS; CHANNEL LENGTH; FULL-BRIDGE; GALLIUM OXIDES; OUTPUT VOLTAGES; RECTIFIERS; ZINC TIN OXIDE;

AMORPHOUS FILMS; AMORPHOUS SEMICONDUCTORS; ELECTRIC RECTIFIERS; INDIUM; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM CIRCUITS; TIN; TITANIUM COMPOUNDS; ZINC;

THIN FILM TRANSISTORS;

EID: 77950098746     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2042424     Document Type: Article

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