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Volumn 88, Issue 7, 2011, Pages 1412-1416
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Comprehensive studies of the degradation mechanism in amorphous InGaZnO transistors by the negative bias illumination stress
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Author keywords
Bias instability; Degradation mechanism; In Ga Zn O semiconductor; Light instability; TFT
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Indexed keywords
BI-LAYER;
BIAS INSTABILITY;
CHANNEL LAYERS;
COMPREHENSIVE STUDIES;
DEGRADATION MECHANISM;
GATE INSULATOR;
HIGH PRESSURE;
HOLE CARRIERS;
IN-GA-ZN-O SEMICONDUCTOR;
NEGATIVE BIAS;
OXYGEN VACANCY DEFECTS;
PHOTO-INDUCED;
PHOTON IRRADIATION;
TFT;
TRANSITION MECHANISM;
VERTICAL ELECTRICAL FIELDS;
AMORPHOUS MATERIALS;
DIELECTRIC MATERIALS;
GATE DIELECTRICS;
GATES (TRANSISTOR);
OXYGEN;
OXYGEN VACANCIES;
STABILITY;
VANADIUM COMPOUNDS;
DEGRADATION;
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EID: 79958064116
PISSN: 01679317
EISSN: None
Source Type: Journal
DOI: 10.1016/j.mee.2011.03.069 Document Type: Conference Paper |
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Times cited : (41)
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References (14)
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