Passivation of amorphous oxide semiconductors utilizing a zinc-tin-silicon-oxide barrier layer

IEEE Electron Device Letters

Volumn 33, Issue 6, 2012, Pages 836-838

  Sundholm, E S ^a   Presley, R E ^a   Hoshino, K ^a   Knutson, C C ^b   Hoffman, R L ^c   Mourey, D A ^c   Keszler, D A ^d   Wager, J F ^a  

^a Oregon State University   (United States)

^b UNIVERSITY OF OREGON   (United States)

^c HEWLETT PACKARD COMPANY   (United States)

^d OREGON STATE UNIVERSITY   (United States)

Author keywords

Indium gallium zinc oxide (IGZO); passivation; stability; thin film transistor (TFT); zinc tin oxide (ZTO); zinc tin silicon oxide (ZTSO)

Indexed keywords

AMORPHOUS OXIDE SEMICONDUCTOR (AOS); BARRIER LAYERS; ELECTRICAL STABILITY; ELECTRONIC PASSIVATION; INDIUM GALLIUM ZINC OXIDES (IGZO); OR CHANNELS; STRESS TESTING; THIN-FILM TRANSISTOR (TFTS); ZINC-TIN-OXIDE (ZTO); ZINC-TIN-SILICON-OXIDE (ZTSO);

CHEMICAL VAPOR DEPOSITION; CONVERGENCE OF NUMERICAL METHODS; GALLIUM; INDIUM; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ORGANIC COMPOUNDS; SILICON OXIDES; THIN FILM TRANSISTORS; TIN;

ZINC;

EID: 84861680280     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2191530     Document Type: Article

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