Dual-function gate driver for a power module with sic junction field-effect transistors

IEEE Transactions on Power Electronics

Volumn 29, Issue 5, 2014, Pages 2367-2379

  Colmenares, Juan ^a   Peftitsis, Dimosthenis ^a   Rabkowski, Jacek ^a,b   Sadik, Diane Perle ^a   Nee, Hans Peter ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Gate driver; junction field effect transistor; power module; silicone carbide

Indexed keywords

CURRENT OSCILLATION; GATE DRIVERS; JUNCTION FIELD EFFECT TRANSISTORS; PARALLEL-CONNECTED; POWER MODULE; SILICONE CARBIDES; SWITCHING PERFORMANCE; THREE-PHASE CONVERTER;

ELECTRIC POWER SYSTEMS; SILICON CARBIDE; SILICONES;

FIELD EFFECT TRANSISTORS;

EID: 84893083630     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2013.2277616     Document Type: Article

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